Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Semiconductor structure, image sensor, chip and forming method thereof

An image sensor and semiconductor technology, which is applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve problems such as increasing the manufacturing cost of image sensors, reducing the yield rate of image sensors, and easily damaging or failing chips. , to achieve the effect of improving utilization rate, high resolution and increasing yield

Active Publication Date: 2019-09-17
ICLEAGUE TECH CO LTD
View PDF6 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the chip of the image sensor is easily damaged or fails during the manufacturing process, which leads to a decrease in the overall yield of the image sensor and increases the manufacturing cost of the image sensor.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor structure, image sensor, chip and forming method thereof
  • Semiconductor structure, image sensor, chip and forming method thereof
  • Semiconductor structure, image sensor, chip and forming method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0047] As described in the background art, it is necessary to improve the yield rate of image sensors and reduce the manufacturing cost of image sensor chips.

[0048] figure 1 It is a schematic diagram of the top view structure of a wafer with an image sensor chip, figure 2 yesfigure 1 The local enlarged schematic diagram of region A in the wafer, image 3 yes figure 1 Schematic diagram of the structure of the chip area in area A of the wafer.

[0049] Please refer to Figure 1 to Figure 3 , the wafer with the image sensor chip includes: a wafer 100, the wafer 100 includes a number of independent chip areas 101 separated from each other; the independent chip area 101 includes: an independent chip area pixel array unit 103, an independent chip area Comparison loop unit 104, independent chip area timing and control unit 105, independent chip area memory unit 106, independent chip area row selection unit and column selection unit 107, independent chip area data transmission...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a semiconductor structure, a method for forming an image sensor, an image sensor chip and an image sensor. The semiconductor structure comprises a substrate comprising a plurality of discrete chip regions, each of the chip regions comprises more than four discrete device regions, each of the device regions comprises a pixel array unit, and at least two pixel array units in each of the chip regions are adjacent to each other. The yield of the image sensor is improved by the semiconductor structure.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor structure, a method for forming an image sensor chip, an image sensor chip and an image sensor. Background technique [0002] In the field of semiconductor technology, an image sensor is a functional device that converts an optical image into an electrical signal. Image sensors can be roughly classified into charge coupled devices (charge coupled device, CCD) and complementary metal oxide semiconductor image sensors (CMOS Image Sensor, CIS). [0003] At present, CCD is the main practical solid-state image sensor device, which has the advantages of low reading noise, large dynamic range and high response sensitivity. CMOS image sensors are widely used in digital cameras, camera phones, digital video cameras, medical imaging devices (such as gastroscopes), automotive In the field of camera equipment and so on. [0004] However, the chip of the image sensor...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/544H01L21/66H01L21/78
CPCH01L21/78H01L22/22H01L22/24H01L22/34
Inventor 姚公达
Owner ICLEAGUE TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com