Manufacturing method of light-emitting diode chip and light-emitting diode chip
A technology for light-emitting diodes and a manufacturing method, which is applied to semiconductor devices, electrical components, circuits, etc., can solve the problems of low chip reliability and poor compactness of passivation protective layers, and achieve the effect of improving compactness and reliability.
Active Publication Date: 2020-04-07
HC SEMITEK SUZHOU
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[0006] The embodiment of the present invention provides a method for manufacturing a light-emitting diode chip and a light-emitting diode chip, which can solve the problem of low reliability of the chip caused by the poor density of the passivation protective layer in the prior art
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[0043] In order to make the object, technical solution and advantages of the present invention clearer, the implementation manner of the present invention will be further described in detail below in conjunction with the accompanying drawings.
[0044] An embodiment of the present invention provides a method for manufacturing a light emitting diode chip. figure 1 It is a flowchart of a method for manufacturing a light emitting diode chip provided by an embodiment of the present invention. see figure 1 , the production method includes:
[0045] Step 101: sequentially forming a buffer layer, an N-type semiconductor layer, an active layer and a P-type semiconductor layer on a first surface of a substrate.
[0046] figure 2 A schematic structural diagram of the light emitting diode chip provided by the embodiment of the present invention after step 101 is performed. Wherein, 10 denotes a substrate, 21 denotes a buffer layer, 22 denotes an N-type semiconductor layer, 23 denote...
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Abstract
The invention discloses a method for manufacturing an LED chip and an LED chip, and belongs to the technical field of semiconductors. The manufacturing method comprises the steps of successively forming a buffer layer, an N-type semiconductor layer, an active layer, and a P-type semiconductor layer; forming a groove; forming a transparent conductive layer; providing an N-type electrode and a P-type electrode; forming a passivation protective layer; thinning a substrate; forming a reflective layer, wherein the passivation protective layer comprises a first single-layer structure, a laminated structure and a second single-layer structure, the laminated structure comprises at least two sublayers, and each sublayer is formed by applying an electric field to a reaction chamber where the substrate is located and introducing silane and argon into the reaction chamber, wherein the silane is decomposed under the effect of the electric field and the silicon elements formed by the decomposition are deposited on the first single-layer structure; and applying an electric field to the reaction chamber and introducing oxygen into the reaction chamber, wherein the oxygen reacts with the silicon elements under the effect of the electric field, and the formed silicon dioxide forms the sublayer. The method can improve chip reliability.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for manufacturing a light emitting diode chip and the light emitting diode chip. Background technique [0002] Since Japanese scientists successfully developed gallium nitride (GaN)-based light-emitting diodes (English: LightEmitting Diode, referred to as LEDs) in the 1990s, LEDs are a new generation of solid-state lighting sources that are efficient, environmentally friendly, and green. The brightness continues to increase, and the application fields are becoming wider and wider. LED has the advantages of low voltage, low power consumption, small size, light weight, long life, high reliability, etc., and is rapidly and widely used in traffic lights, automotive interior and exterior lights, urban landscape lighting, mobile phone backlight, outdoor full-color display screens, etc. field. Especially in the field of lighting, LED has been widely used and played a u...
Claims
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IPC IPC(8): H01L33/00H01L33/44
CPCH01L33/007H01L33/44H01L2933/0025
Inventor 兰叶顾小云
Owner HC SEMITEK SUZHOU