GaAs HEMT (high electron mobility transistor) process-based positive-voltage-to-negative-voltage logic circuit

A logic circuit and negative pressure technology, applied in the direction of logic circuits using specific components, logic circuits, logic circuits using basic logic circuit components, etc., can solve system complexity and volume increase, cost increase, and increase system power consumption etc. to achieve high conversion efficiency, lower power consumption, and simple conversion structure
CN110247651APending Publication Date: 2019-09-17NO 24 RES INST OF CETC
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
NO 24 RES INST OF CETC
Publication Date
2019-09-17

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Abstract

The invention provides a GaAs HEMT process-based positive voltage-to-negative voltage logic circuit. According to the positive-voltage-to-negative-voltage logic circuit, through the structural design of an input level shift circuit unit, a buffer circuit unit, an in-phase logic output circuit unit and a reverse-phase logic output circuit unit, an input positive pressure logic signal can be converted into two output complementary (in-phase and one-phase) negative pressure logic signals, the conversion structure is simple, and the conversion efficiency is high; each circuit unit is designed on the basis of a GaAs HEMT process, so that the positive-voltage-to-negative-voltage logic circuit can be directly integrated with a unit chip of a monolithic microwave integrated circuit such as a radio frequency switch, a numerical control attenuator and a numerical control phase shifter, the simplification and miniaturization of the application of the monolithic microwave integrated circuit system are promoted, and the power consumption of the monolithic microwave integrated circuit system is reduced.
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Description

technical field

[0001] The invention relates to the technical field of semiconductor integrated circuit design, in particular to a positive-voltage-to-negative-voltage logic circuit based on GaAs HEMT technology. Background technique

[0002] In control-type single-chip microwave integrated circuits such as radio frequency switches, numerically controlled attenuators, and numerically controlled phase shifters, the control logic circuit is an indispensable unit circuit, which is used to realize digital logic such as switch on and off, attenuation / phase shift switching, etc. control function. Because GaAs-based HEMT transistors have significant characteristics such as high characteristic frequency, fast switching speed, good noise performance, and high output power, the current mainstream monolithic microwave integrated circuits use GaAs HEMT technology.

[0003] Such as figure 1 As shown, the turn-on threshold of the enhancement-mode GaAs-based HEMT transistor is a positive...

Claims

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