GaAs HEMT (high electron mobility transistor) process-based positive-voltage-to-negative-voltage logic circuit

Abstract

The invention provides a GaAs HEMT process-based positive voltage-to-negative voltage logic circuit. According to the positive-voltage-to-negative-voltage logic circuit, through the structural design of an input level shift circuit unit, a buffer circuit unit, an in-phase logic output circuit unit and a reverse-phase logic output circuit unit, an input positive pressure logic signal can be converted into two output complementary (in-phase and one-phase) negative pressure logic signals, the conversion structure is simple, and the conversion efficiency is high; each circuit unit is designed on the basis of a GaAs HEMT process, so that the positive-voltage-to-negative-voltage logic circuit can be directly integrated with a unit chip of a monolithic microwave integrated circuit such as a radio frequency switch, a numerical control attenuator and a numerical control phase shifter, the simplification and miniaturization of the application of the monolithic microwave integrated circuit system are promoted, and the power consumption of the monolithic microwave integrated circuit system is reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductor integrated circuit design, in particular to a positive-voltage-to-negative-voltage logic circuit based on GaAs HEMT technology. Background technique [0002] In control-type single-chip microwave integrated circuits such as radio frequency switches, numerically controlled attenuators, and numerically controlled phase shifters, the control logic circuit is an indispensable unit circuit, which is used to realize digital logic such as switch on and off, attenuation / phase shift switching, etc. control function. Because GaAs-based HEMT transistors have significant characteristics such as high characteristic frequency, fast switching speed, good noise performance, and high output power, the current mainstream monolithic microwave integrated circuits use GaAs HEMT technology. [0003] Such as figure 1 As shown, the turn-on threshold of the enhancement-mode GaAs-based HEMT transistor is a positive...

AI Technical Summary

Problems solved by technology

However, because the GaAs HEMT process is not compatible with the CMOS process, single-chip integration cannot be achieved, and only secondary integration is possible, resulting in increased system complexity, volume, and cost. At the same time, new devices also increase the power consumption of the system.

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