A computational lithography modeling method and device

Abstract

This application relates to the technical field of integrated circuit manufacturing, and discloses a computational lithography modeling method and device. In this method, the optical module group is determined by obtaining the type of the graphic unit contained in the test pattern, and then according to the optical module group, the obtained Parameters of the physical optics model. Calculate the ideal light intensity distribution of the optical module group on the photoresist, and obtain the parameters of the photochemical model according to the ideal light intensity distribution and the photochemical reaction excited by the optical module group on the photoresist. Then simulate the boundary position of the test pattern formed on the photoresist, and obtain the critical dimension simulation data of the test pattern, if the fitting error between the critical dimension measurement data and the critical dimension simulation data is not greater than the preset allowable error, a computational lithography model is established. The computational lithography modeling method disclosed in the present application effectively improves the accuracy of the computational lithography model by establishing different optical modules to simulate different graphics units.

Description

technical field [0001] The present application relates to the technical field of integrated circuit manufacturing, and in particular, to a computational lithography modeling method and device. Background technique [0002] With the development of the lithography process, the size of the device in the integrated circuit manufacturing process has developed from sub-micron to ultra-deep sub-micron, that is, the key line width of the device is continuously reduced. With the shrinking of the key line width of the device, the Optical Proximity Effect (OPE) in the lithography process is becoming more and more prominent. OPE refers to the diffraction phenomenon and various physical and chemical effects of the lithography system. After the pattern on the reticle is transferred to the wafer surface, the obtained pattern produces various distortions, such as narrowing of the line width. In order to solve this problem, model-based Optical Proximity Correction (OPC) technology is usuall...

AI Technical Summary

Problems solved by technology

In a set of computational lithography model parameters, the physical optics model parameters corresponding to an optical module, when simulating and fitting a test pattern, the fitting results obtained for different pattern units are different, which leads to When using the fitting results to optimize the model parameters, the accuracy of the optimization results cannot be guaranteed

Therefore, with the increasing complexity of the test pattern, the accuracy of the computational lithography model will not be able to meet the requirements of the lithography process

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