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a based on be x zn 1-x o Flexible deep ultraviolet photodetector of amorphous film and its preparation method

A technology of amorphous thin film and deep ultraviolet light, which is applied in the field of photodetectors, can solve the problems of large lattice mismatch, few research reports, and easy phase separation, so as to achieve low production cost, reduce production cost, and improve portability. sexual effect

Active Publication Date: 2020-06-23
HUBEI UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the large lattice mismatch between BeO and ZnO, phase separation is easy to occur during the doping process, and it is difficult for Be to be doped into ZnO, so there are few research reports on BeZnO deep ultraviolet photodetectors.
However, flexible deep-UV photodetectors based on BeZnO amorphous films have not been reported yet.

Method used

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  • a based on be <sub>x</sub> zn <sub>1-x</sub> o Flexible deep ultraviolet photodetector of amorphous film and its preparation method
  • a based on be <sub>x</sub> zn <sub>1-x</sub> o Flexible deep ultraviolet photodetector of amorphous film and its preparation method
  • a based on be <sub>x</sub> zn <sub>1-x</sub> o Flexible deep ultraviolet photodetector of amorphous film and its preparation method

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Embodiment 1

[0048] Such as figure 1 As shown, a Be-based 0.15 Zn 0.85 The flexible deep ultraviolet photodetector of O amorphous film, described detector comprises flexible PET substrate, active layer, a pair of parallel metal Al electrode successively from bottom to top; Wherein: described active layer is Be 0.15 Zn 0.85 O amorphous thin film, the thickness of the active layer is 150nm, the thickness of the parallel metal Al electrodes is 80nm, and the distance between the parallel metal Al electrodes is 100μm.

[0049] Based on the Be described above in this embodiment 0.15 Zn 0.85 The flexible deep ultraviolet photodetector of O amorphous film is prepared by the following method, including the following steps:

[0050] Step 1: Preparation of Be by solid-state sintering method 0.15 Zn 0.85 Oceramic target

[0051] 1.1 Weigh 9.89g ZnO powder and 0.54g BeO powder by molar ratio ZnO:BeO=85:15, after mixing, add 20g deionized water, then place in planetary ball mill tank (ball mill ...

Embodiment 2

[0063] A Be-based 0.3 Zn 0.7 The flexible deep ultraviolet photodetector of O amorphous film, described detector comprises flexible PET substrate, active layer, a pair of parallel metal Al electrode successively from bottom to top; Wherein: described active layer is Be 0.3 Zn 0.7 O amorphous film, the thickness of the active layer is 170nm, the thickness of the parallel metal Al electrodes is 72nm, and the spacing is 100μm.

[0064] The above-mentioned Be based on this embodiment 0.3 Zn 0.7 The flexible deep ultraviolet photodetector of O amorphous film is prepared by the following method, including the following steps:

[0065] Step 1: Preparation of Be by solid-state sintering method 0.3 Zn 0.7 Oceramic target

[0066] 1.1 Weigh 9.072g of ZnO powder and 1.2g of BeO powder by molar ratio ZnO:BeO=70:30, after mixing, add 20g of deionized water, and then place it in a planetary ball mill jar (the ball milling medium is zirconia ceramic balls), Ball milling for 8 hours t...

Embodiment 3

[0078] A Be-based 0.4 Zn 0.6 The flexible deep ultraviolet photodetector of O amorphous film, described detector comprises flexible PET substrate, active layer, a pair of parallel metal Al electrode successively from bottom to top, wherein: described active layer is Be 0.4 Zn 0.6 O amorphous film, the thickness of the active layer is 156nm, the thickness of the parallel metal Al electrodes is 40nm, and the distance is 100μm.

[0079] The above-mentioned Be based on this embodiment 0.4 Zn 0.6 The flexible deep ultraviolet photodetector of O amorphous film is prepared by the following method, including the following steps:

[0080] Step 1: Preparation of Be by solid-state sintering method 0.4 Zn 0.6 Oceramic target

[0081] 1.1 Weigh 8.748g of ZnO powder and 1.8g of BeO powder according to the molar ratio of ZnO: BeO=60:40, after mixing, add 20g of deionized water, and then place it in a planetary ball mill tank (the ball milling medium is zirconia ceramic balls) , ball ...

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Abstract

The invention relates to a flexible deep ultraviolet photoelectric detector based on a BexZn<1-x>O amorphous film and a preparation method thereof, and belongs to the technical field of photoelectric detector. The flexible deep ultraviolet photoelectric detector comprises a transparent flexible substrate, an active layer and a pair of parallel metal electrodes in turn from the bottom up, wherein the active layer is a BexZn<1-x>O amorphous film, x is greater than 0 and less than 1, and the thickness of the active layer is 100-200nm. According to the invention, the optical band gap of a BexZn<1-x>O alloy is successfully increased through doping Be into ZnO. More importantly, the deposition of an amorphous BexZn<1-x>O alloy film with excellent photoelectric performance on the flexible substrate is achieved, and a flexible deep ultraviolet photoelectric detector capable of detecting deep ultraviolet radiation signals with the wavelength being less than 280nm is successfully prepared. In addition, the device prepared according to the invention meet the requirement of being foldable, wearable, light, portable and the like.

Description

technical field [0001] The invention belongs to the technical field of photodetectors, in particular to a Be-based x Zn 1-x Flexible deep-ultraviolet photodetector of O amorphous film and its preparation method. Background technique [0002] As an important part of electromagnetic radiation, ultraviolet radiation plays an important role in human life. General ultraviolet radiation can be divided into three bands UVA (320nm ~ 400nm), UVB (280nm ~ 320nm), UVC (200nm ~ 280nm). Ultraviolet photodetectors that detect ultraviolet radiation signals in different bands can be used in different fields, such as in security communication, environmental pollution monitoring, flame detection, missile detection, etc., have broad application prospects. Among them, the UVC ultraviolet photodetector can effectively monitor the changes of the Antarctic ozone hole and be used in some special fields. At present, most traditional ultraviolet photodetectors are rigid devices. Compared with the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0296H01L31/0376H01L31/0392H01L31/09H01L31/18
CPCH01L31/02963H01L31/0376H01L31/03926H01L31/095H01L31/1836Y02P70/50
Inventor 何云斌黎明锴鄂文涛程阳常钢卢寅梅李派张清风陈俊年
Owner HUBEI UNIV
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