Preparation method of silicon-based III-V infrared photodetector array
An electrical detector and infrared light technology, applied in the field of optoelectronics, can solve the problems of insufficient response speed, high cost, large unit devices, etc., and achieve the effects of mature growth technology, good quality, and reduced production costs.
Active Publication Date: 2021-07-27
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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[0007] The present disclosure provides a method for preparing a silicon-based III-V infrared photodetector array to at least partially solve the problems in the prior art of high cost, large unit devices, and insufficient response speed
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[0041] According to the basic concept of the present invention, a method for preparing a silicon-based III-V infrared photodetector array is provided, comprising: growing silicon dioxide on an SOI substrate, etching periodic silicon dioxide on the grown silicon dioxide Rectangular trench; etching the SOI top layer silicon below the rectangular trench to form a V-shaped trench; growing III-V detector epitaxial structures in the V-shaped trench and the rectangular trench; Depositing a layer of silicon dioxide as an isolation layer; etching a region for growing a lower electrode on a part of the isolation layer and depositing a lower electrode; etching a plurality of rectangular grooves with a set size in other areas of the isolation layer; Silicon dioxide is grown in the plurality of dimensioned rectangular trenches, an upper electrode region is prepared on the silicon dioxide and an upper electrode is deposited. The above-mentioned semiconductor process can grow materials in a ...
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Abstract
A method for preparing a silicon-based III-V group infrared photodetector array, comprising: growing silicon dioxide on an SOI substrate, etching periodic rectangular trenches on the grown silicon dioxide; etching the rectangular The SOI top layer silicon under the trench forms a V-shaped trench; the III-V detector epitaxial structure is grown in the V-shaped trench and the rectangular trench; a layer of silicon dioxide is deposited on the epitaxial structure for isolation layer; etching a region where the lower electrode is grown and depositing the lower electrode in a part of the upper part of the isolation layer; etching a plurality of rectangular trenches of set size in other regions of the isolation layer; Silica is grown in the rectangular trench, on which the upper electrode region is prepared and the upper electrode is deposited.
Description
technical field [0001] The invention relates to the field of optoelectronic technology, in particular to a method for preparing a silicon-based III-V infrared photodetector array. Background technique [0002] Infrared detection technology is widely used in today's industrial and technological fields, and has good applications in night vision imaging, wireless communication, optical communication, and industrial inspection. As early as 1800, William Hrschel used simple measurement tools to measure and found that there is an energy distribution beyond the wavelength of visible light, that is, infrared radiation. Since then, scientific detection of infrared bands and research on infrared detection devices have attracted great interest from physicists. [0003] Infrared detectors are divided into thermal detectors and photon detectors according to different working principles. The quantum well photodetector we studied belongs to the field of photon detectors. Compared with th...
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IPC IPC(8): H01L31/0352H01L31/09H01L31/18
CPCH01L31/035209H01L31/09H01L31/184Y02P70/50
Inventor 杨文宇李亚节周旭亮王梦琦于红艳潘教青王圩
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI