A photodetector based on thermal electrons absorbed by chiral metals
A technology of photodetectors and thermal electrons, applied in the field of photoelectric detection, can solve the problems of difficult modulation of absorption bands and low light absorption, achieve good application prospects, simple control methods, and enhance the effect of net absorption rate
Inactive Publication Date: 2021-02-09
BEIJING BOYE ENG TECH CO LTD
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Problems solved by technology
[0006] In order to solve the problems of low light absorption and difficult modulation of the absorption band of photodetectors based on metal absorption existing in the prior art, the present invention provides a thermionic photodetector based on chiral metal absorption
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Embodiment 1
[0026] Such as figure 2 As shown, a thermionic photodetector based on chiral metal absorption, the photodetection is a multi-layer structure, from bottom to top are the substrate layer 1, the lower metal layer 2, the middle semiconductor layer 3, and the upper metal layer 4 ; Wherein the lower metal layer 2 and the upper metal layer 4 are connected by wires.
[0027] in particular:
[0028] Such as figure 1 and figure 2 As shown, in this embodiment, the upper metal layer 4 has a right-handed hole array structure, and the lower metal layer 2 has a left-handed hole array structure, and the upper metal layer 4 and the lower metal layer 2 are respectively in contact with the middle semiconductor layer 3 to form a Schottky junction. , when the incident light irradiates the upper metal layer 4 and the lower metal layer 2 of the thermal electron photodetector of this embodiment and the middle semiconductor layer 3 respectively, when the thermal electron energy generated by the i...
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Abstract
The invention relates to the technical field of photoelectric detection, in particular to a thermoelectron photoelectric detector based on chiral metal absorption. The thermoelectron photoelectric detector is of a multilayer structure and sequentially comprises a substrate layer, a lower metal layer, a middle semiconductor layer and an upper metal layer from bottom to top, wherein the lower metal layer and the upper metal layer are connected through a wire. According to the thermoelectron photoelectric detector based on chiral metal absorption, different Schottky barriers caused by a left-handed hole structure and a right-handed hole structure are utilized, so that the net absorptivity of the upper metal layer and the lower metal layer is enhanced through asymmetric absorption, thereby finally improving the absorption of incident light by the detector, and facilitating the detection of the incident light. In addition, the right-handed hole structure of the upper metal layer is filled with vanadium dioxide, the temperature of the environment where the detector is located is changed, and the regulation and control over the detection wavelength can be achieved. The thermoelectron photoelectric detector is simple in structure, is easy to prepare, is very good in application prospect, and provides a new idea for the research of a detector.
Description
technical field [0001] The invention belongs to the technical field of photoelectric detection, and in particular relates to a thermal electron photodetector based on chiral metal absorption. Background technique [0002] Chirality refers to the property that itself cannot completely overlap with the mirror image, in which a chiral substance and its mirror image have left-handedness and right-handedness respectively, and are called chiral counterparts. The structure of many substances in nature has chirality, such as protein, DNA and so on. Chirality is particularly important to the significance of life, so detecting the chirality of substances has become a research hotspot for many researchers. Circular Dichroism (CD) is usually used to detect the chirality of substances or structures. CD can be defined as the difference in the absorption rate of chiral media for different circularly polarized light, and the difference is circular dichroism. [0003] Due to the developmen...
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IPC IPC(8): H01L31/0224H01L31/11
CPCH01L31/022408H01L31/11
Inventor 不公告发明人
Owner BEIJING BOYE ENG TECH CO LTD