Infrared broad spectrum detector based on graphene nanoribbon

Abstract

The invention discloses an infrared broad spectrum detector based on a graphene nanoribbon. The detector comprises the graphene nanoribbon, a gate, a source, a drain and a gate medium. The band gap size of the graphene nanoribbons in the detector can be adjusted according to the width thereof on the one hand, and can be adjusted through the gate voltage on the other hand. On the whole, the band gap can be adjusted in two dimensions. Different band gap sizes correspond to different photo response frequencies of the detector. Therefore, the detector has a wide spectral detection capability, andthe detection band covers full infrared wave detection of 760 nm to 100 microns. The detector has the advantages of high detection sensitivity and fast response speed, and can effectively solve the urgent need for infrared wide spectrum detection.

Description

technical field [0001] The invention belongs to the fields of material science, optoelectronic technology and semiconductor devices, and in particular relates to an infrared wide-spectrum detector based on graphene nanobelts. Background technique [0002] An infrared detector is an optoelectronic device that can convert invisible infrared radiation into a measurable signal. It has a wide range of applications in the fields of military, meteorology, industry, environmental science, and medical diagnosis. In particular, the ability to capture and identify relevant information about incoming targets in a timely manner in modern warfare has an urgent need in the fields of infrared reconnaissance, infrared guidance, and infrared stealth, and is the key to victory in informationized warfare. [0003] However, most traditional infrared detectors based on materials such as indium gallium arsenide (InGaAs), mercury cadmium telluride (HgCdTe), lead selenide (PbSe) can only detect a si...

AI Technical Summary

Problems solved by technology

[0003] However, most traditional infrared detectors based on materials such as indium gallium arsenide (InGaAs), mercury cadmium telluride (HgCdTe), lead selenide (PbSe) can only detect single-band

With the further development of target camouflage technology, single-band detection is no longer able to conduct accurate and comprehensive early warning and reconnaissance of stealth aircraft, near space vehicles, ballistic missiles and other target objects, and cannot meet the needs of information warfare

For camouflage targets, often only a part of the band can be camouflaged, and it is impossible to camouflage all bands

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