Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Graphene even harmonic frequency multiplier based on direct current bias and design method

An even-order harmonic and DC bias technology, which is applied in the field of graphene frequency multipliers, can solve the problem of low frequency multiplication efficiency of odd-order harmonic frequency multipliers, unstable performance of graphene frequency multiplier circuits, and inability to invest in a large scale Use and other problems to achieve good frequency multiplication effect and high frequency multiplication efficiency

Active Publication Date: 2019-10-08
CHENGDU UNIVERSITY OF TECHNOLOGY
View PDF9 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004]But because the graphene two-port frequency multiplier circuit has a natural even harmonic suppression function, so the frequency multiplier is designed for the odd frequency multiplier, It is not yet possible to use it to make even-order harmonic frequency multipliers, and the frequency multiplication efficiency of graphene odd-order harmonic frequency multipliers is low, so it cannot be put into large-scale use
The circuit performance of the graphene frequency multiplier is still unstable, and the circuit assembly needs to be further improved

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Graphene even harmonic frequency multiplier based on direct current bias and design method
  • Graphene even harmonic frequency multiplier based on direct current bias and design method
  • Graphene even harmonic frequency multiplier based on direct current bias and design method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] Embodiment 1: see Figure 1 to Figure 3 , a graphene even-order harmonic frequency multiplier based on DC bias, comprising a cavity, a signal input terminal 2, a signal output terminal 3, and a graphene frequency multiplier substrate in the cavity, the graphene frequency multiplier The substrate comprises a high-frequency dielectric substrate 1 and a graphene 8 arranged thereon, and the front end and rear end of the graphene 8 are respectively connected to the signal input terminal 2 and the signal output terminal 3 through a microstrip line, and is characterized in that:

[0045] On the microstrip line near the signal input terminal 2 and the signal output terminal 3, a first DC bias circuit and a second DC bias circuit are respectively provided, and the first DC bias circuit and the second DC bias circuit have the same structure , including a DC blocking capacitor 4 and a high-frequency inductor 5, the two ends of the DC blocking capacitor 4 are connected in series on...

Embodiment 2

[0062] Example 2: see Figure 1 to Figure 3 , a graphene even-order harmonic frequency multiplier based on DC bias, comprising a cavity, a signal input terminal 2, a signal output terminal 3, and a graphene frequency multiplier substrate in the cavity, the graphene frequency multiplier The substrate includes a high-frequency dielectric substrate 1 and a graphene 8 arranged thereon. The front end and rear end of the graphene 8 are respectively connected to the signal input terminal 2 and the signal output terminal 3 through a microstrip line, and the microstrip line is close to the signal input terminal. Terminal 2 and signal output terminal 3 are respectively provided with a first DC bias circuit and a second DC bias circuit, the first DC bias circuit and the second DC bias circuit have the same structure, including DC blocking capacitor 4 and High-frequency inductance 5, the two ends of the DC blocking capacitor 4 are connected in series on the microstrip line, one end of the...

Embodiment 3

[0082] Embodiment 3: according to the scheme of embodiment 2, we design a secondary frequency multiplier, that is to say, the frequency of the fundamental wave signal is fc, the frequency of the output signal is 2fc, and the signal frequency component nfc to be recovered, wherein n=1 , 2, 3, 4... and n≠2. All the other are identical with embodiment 2.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a graphene even harmonic frequency multiplier based on direct current bias and a design method. The graphene even harmonic frequency multiplier comprises a cavity, a signal input end, a signal output end and a graphene frequency multiplier substrate, wherein the graphene frequency multiplier substrate comprises a high-frequency medium substrate and graphene arranged on thehigh-frequency medium substrate, wherein the front end and the rear end of the graphene are respectively connected with a signal input end and a signal output end through microstrip lines, a first direct current bias circuit and a second direct current bias circuit are respectively arranged on the microstrip lines close to the signal input end and the signal output end, and a graphene frequency doubling frequency spectrum can be changed after the bias circuit is added. By adding the direct current bias, odd harmonic components can be suppressed, even harmonic components can be amplified, and thus the frequency doubling effect can be improved. The defect that in the prior art, fundamental waves and odd harmonic components generated by graphene under excitation of an electromagnetic field have a natural inhibition function on even harmonics is overcome, even frequency multiplication can be achieved, and wide application space is achieved in the field of terahertz devices and radio frequency chip design.

Description

technical field [0001] The invention relates to a graphene frequency multiplier, in particular to a graphene even-order harmonic frequency multiplier and a design method based on a DC bias. Background technique [0002] Microwave frequency sources are widely used in systems such as communication, guidance, and test instruments. The frequency multiplier is one of the important components of the transceiver components. In microwave and millimeter wave frequency bands, two-port passive frequency multipliers are widely used in frequency conversion circuits. In terms of linearity, noise and bandwidth, passive frequency multipliers have better performance than active frequency multipliers. In recent years, graphene is considered to be the next-generation electronic material due to its high electron traction rate and good thermal conductivity, and has become a hot research direction. [0003] Research has found that graphene will generate fundamental waves and their harmonic comp...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H03B19/00
CPCH03B19/00
Inventor 侯学师方勇郭听听袁一品钟晓玲郭勇
Owner CHENGDU UNIVERSITY OF TECHNOLOGY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products