Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Solar cell and preparation method thereof

A solar cell and battery technology, applied in the field of solar cells, can solve the problems of low photoelectric conversion efficiency of solar cells, etc., and achieve the effects of compatible preparation process, improved light-receiving rate, and convenient industrial production.

Inactive Publication Date: 2019-10-15
张勇
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to solve the technical problem of low photoelectric conversion efficiency of solar cells in the prior art, a solar cell and its preparation method are proposed

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Solar cell and preparation method thereof
  • Solar cell and preparation method thereof
  • Solar cell and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0040] Such as Figure 1 to Figure 4 As shown, the structure of the single-polycrystalline P-type single-sided PERC cell of the present invention is given.

[0041] The specific preparation method is: provide a P-type single polycrystalline silicon wafer as a substrate (P-type substrate), the thickness of the selected P-type single polycrystalline silicon wafer is 150-300 microns, and on its surface (including the upper surface and the lower surface) ) for velvet treatment, the velvet grains of the velvet surface formed by velvet are 1-15 microns, and the reflectivity is 5-25%. Then perform phosphorous diffusion on the upper surface of the textured P-type single-polycrystalline silicon wafer to form an N-type diffusion layer. After the P-type single-polycrystalline silicon wafer is diffused with phosphorus, the sheet resistance is 50-140 ohms / □. Then perform wet etching on the P-type single polysilicon wafer after phosphorus diffusion. Wet etching will remove the phosphorus d...

no. 2 example

[0043] Such as Figure 5 to Figure 6 As shown, the structure of the single-polycrystalline P-type bifacial PERC cell of the present invention is given.

[0044] Its specific preparation method is: provide a P-type single-polycrystalline silicon wafer as a substrate, and perform texturing treatment on its surface. The thickness of the P-type single-polycrystalline silicon wafer is 150-300 microns, and the textured grains of the textured surface are 1 ~15 microns, with a reflectivity of 5~25%; Phosphorus diffusion is performed on the upper surface after texturing to form an N-type diffusion layer. Wet etching, wet etching will remove the phosphorus diffusion area on the lower surface (back side) and the phosphorosilicate glass part on the upper surface (front side); oxidation annealing is performed above the phosphorus diffusion surface to form an oxide layer (SiO 2 layer), the thickness of the oxide layer is about 1-10 nanometers; a passivation layer is grown on the oxide laye...

no. 3 example

[0046] Such as Figure 7 to Figure 8 As shown, the structure of the single-polycrystalline N-type bifacial PERC cell of the present invention is given.

[0047] The specific preparation method is as follows: 1) Provide an N-type single-polycrystalline silicon wafer (N-type substrate), the thickness of the N-type single-polycrystalline silicon wafer is 150-300 microns, perform texturing treatment on the upper and lower surfaces, and form The velvet grains of the suede surface are 1-15 microns, and the reflectivity is 5-25%; 2) Then, boron is diffused on the upper surface after velvet making to form a P-type diffusion layer, and the square resistance of the silicon wafer after boron diffusion is 50-100 ohm / □; 3) Then perform wet etching on the boron-diffused N-type single polysilicon wafer. Wet etching will remove the boron diffusion area on the back and the borosilicate glass part on the front; The back of the wafer is heavily doped to form an N+ diffusion layer; 5) Then, the ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a solar cell and a preparation method thereof. The preparation method of the solar cell comprises the following steps: selecting a corresponding substrate; perforating the substrate or not perforating the substrate according to the type of a cell to be prepared; carrying out texturing on the surface of the substrate and carrying out diffusion treatment to form a corresponding diffusion layer; carrying out further preparation according to the cell type; and according to the cell type, covering a transparent conducting layer on at least one light receiving surface of theprepared solar cell. The solar cell can effectively improve photoelectric conversion efficiency, is simple and practicable and is convenient for industrial production.

Description

technical field [0001] The invention relates to a solar cell and a method for preparing the solar cell. Background technique [0002] Since the first solar cell was born in Bell Labs, silicon solar cells have been extensively researched and developed as well as practical applications, especially crystalline silicon solar cells. With the continuous development of science and technology, the photoelectric conversion efficiency of crystalline silicon solar cells has been continuously improved. The cost of production has also continued to decrease. At present, crystalline silicon solar cells account for more than 80% of the global market for solar cells. The photoelectric conversion efficiency of crystalline silicon solar cells has also exceeded 22%. The cost gap with traditional thermal power generation is also shrinking. In a few years, it is expected to be equal to the cost of thermal power generation. [0003] As a clean and non-polluting energy source, crystalline silicon...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0216
CPCH01L31/02167H01L31/1804Y02E10/547Y02P70/50
Inventor 张勇
Owner 张勇
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products