Sm-modified lead magnesium niobate-lead titanate-based piezoelectric and ferroelectric thick film material and preparation method thereof

Abstract

The invention belongs to the technical field of ferroelectric and piezoelectric functional materials, and discloses a Sm-modified lead magnesium niobate-lead titanate-based piezoelectric and ferroelectric thick film material. The molecular formula of the Sm-modified lead magnesium niobate-lead titanate-based piezoelectric and ferroelectric thick film material is [Sm<x>-Pb<(1-1.5x)>][(Mg<1/3>Nb<2/3>)<(1-Y)>Ti<y>]O3, wherein 0<X<=0.1,0.25<Y<=0.32, the preparation method comprises the steps that S1, raw materials areweighed according to stoichiometric ratio; S2, a two-step solid-phase reaction method is adopted to prepare and obtain Sm-modified lead magnesium niobite-lead titanate powder body ofperovskite phase; S3, the powder body is mixed with a dispersing agent and a binder to obtain a slurry; S4,the slurry is subjected to tape casting, drying, cutting, and lamination to obtain a green tape in a desired shape; S5, the green tape is adhered and sintered to obtain the piezoelectric and ferroelectric thick film material. Thepiezoelectric and ferroelectric thick film material is of a perovskite phase structure, microstructure is compact, piezoelectric performanceis excellent, sinteringcan be conducted at a low temperature, preparation technology is simple, the cost is low, industrial production is advantageous, and the piezoelectric and ferroelectric thick film material is expected to be used for piezoelectric ultrasonic transducer and high frequency piezoelectric ultrasonic transducer arrays, piezoelectric actuators, and sensors.

Description

technical field [0001] The invention relates to the technical field of ferroelectric piezoelectric functional materials, in particular to a Sm modified lead magnesium niobate-lead titanate based piezoelectric ferroelectric thick film material and a preparation method thereof. Background technique [0002] As an extremely important functional material in today's society, ferroelectric materials not only show great application potential in the field of information storage because of their two polar states, but also because they can output electrical signals under stress, Conversely, it can also generate strain under the drive of voltage, and is widely used as the core material of piezoelectric sensors, actuators, transducers and other devices. fields are widely used. [0003] (1-x)Pb(Mg 1 / 3 Nb 2 / 3 )O 3 -xPbTiO 3 (PMN-PT) relaxed piezoelectric single crystal has ultra-high piezoelectric response, piezoelectric coefficient d 33 Up to 2800pC / N. PMN-PT is near the quasi-iso...

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Problems solved by technology

Most of the current thick-film material devices are obtained from ceramics through thinning technology, and the thinnest thickness that can be achieved is about 100 μm,

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