Surface treatment method for semiconductor substrate
A surface treatment and semiconductor technology, applied in the field of surface treatment of semiconductor substrates, can solve problems affecting semiconductor performance and other issues
Inactive Publication Date: 2019-10-22
SAE TECH DELEVOPMENT DONGGUAN
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Problems solved by technology
At present, the semiconductor substrate is generally cleaned by clear water, but this cleaning method can only temporarily clean the semiconductor substrate. Since the existing semiconductor substrate generally has a large surface tension and good hydrophilicity, the use of the above cleaning The semiconductor substrate after the method is still vulnerable to water vapor, liquid, oil, etc., thereby affecting the performance of the semiconductor
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[0020] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.
[0021] see figure 1 As shown, a method for surface treatment of a semiconductor substrate according to a preferred embodiment of the present invention comprises the following steps:
[0022] S11, using ultrasonic waves to pre-clean the semiconductor substrate, the pre-cleaning time is 20 minutes; wherein, isopropanol is used as the cleaning solvent;
[0023] S12, using ion beam etching to pre-clean the semiconductor substrate;
[0024] S13, using magnetron sputte...
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The invention relates to the technical field of semiconductors, and discloses a surface treatment method for a semiconductor substrate. The surface treatment method for the semiconductor substrate comprises the steps that firstly, the semiconductor substrate is precleaned by adopting ultrasonic waves in order to remove stains on the surface of the semiconductor substrate; secondly, the precleanedsemiconductor substrate is etched by adopting ion beams in order to improve the cleanliness of the surface of the semiconductor substrate; thirdly, a silicon transition layer is deposited on the etched semiconductor substrate by adopting magnetron sputtering in order to improve the bonding property between a diamond-like film and the semiconductor substrate in the subsequent process; fourthly, thediamond-like film is deposited on the semiconductor substrate obtained after the silicon transition layer is deposited in order to obtain a uniform and compact covering layer; and lastly, the semiconductor substrate obtained after the diamond-like film is deposited is doped with fluorine in order to improve the hydrophobicity and the lipophobicity of the semiconductor substrate, therefore, the condition that water vapor, liquid, oil stains and the like are accumulated on the surface of the semiconductor substrate is avoided, and then the properties of the semiconductors are improved.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a surface treatment method for a semiconductor substrate. Background technique [0002] The semiconductor substrate is used to carry the semiconductor, and the cleanliness of its surface affects the performance of the semiconductor. At present, the semiconductor substrate is generally cleaned by clear water, but this cleaning method can only temporarily clean the semiconductor substrate. Since the existing semiconductor substrate generally has a large surface tension and good hydrophilicity, the use of the above cleaning The semiconductor substrate after the method is still easily affected by water vapor, liquid, oil, etc., thereby affecting the performance of the semiconductor. Contents of the invention [0003] The purpose of the present invention is to provide a surface treatment method for semiconductor substrates, which can improve the hydrophobicity and oleophobic...
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Login to View More IPC IPC(8): C23C14/32C23C14/06C23C14/02C23C16/28C23C28/04
CPCC23C14/325C23C14/0605C23C14/024C23C16/28C23C28/046
Inventor 郎鑫涛
Owner SAE TECH DELEVOPMENT DONGGUAN