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Mixed white light LED device with III-group nitride quantum well-metal-quantum dot mixed structure

A technology of LED devices and quantum dots, applied in semiconductor devices, electrical components, circuits, etc., can solve the problem of short coupling distance between quantum wells and quantum dots NRET, and achieve the effect of fast resonance energy transfer

Inactive Publication Date: 2019-10-25
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to solve the problem that the quantum well-quantum dot NRET coupling distance of the hybrid white LED device prepared by the above-mentioned prior art is short. The present invention provides a hybrid white light with a group III nitride quantum well-metal-quantum dot hybrid structure LED device

Method used

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  • Mixed white light LED device with III-group nitride quantum well-metal-quantum dot mixed structure
  • Mixed white light LED device with III-group nitride quantum well-metal-quantum dot mixed structure
  • Mixed white light LED device with III-group nitride quantum well-metal-quantum dot mixed structure

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Embodiment 1

[0043] Such as Figure 1-2 As shown, the group III nitride quantum well-metal-quantum dot hybrid structure hybrid white LED device of this embodiment includes:

[0044] a sapphire substrate;

[0045] an n-type GaN layer grown on the substrate;

[0046] An In grown on the n-type GaN layer x Ga 1-x N / GaN quantum well active layer;

[0047] a p-type GaN layer grown on the quantum well active layer;

[0048] An ordered metal nano-grating array, the metal nano-grating array is arranged on the surface of the p-type GaN layer, and the gaps of the metal nano-grating array are filled with II-VI group quantum dots.

[0049] A p-type electrode fabricated on the metal nano-grating array;

[0050] An n-type electrode fabricated on the n-type GaN layer;

[0051] The thickness of the n-type GaN layer is 2um;

[0052] The quantum well active region x is 0.22, the emission wavelength is 465nm, the quantum well period is 10, and the thickness is 30nm;

[0053] The thickness of the p-ty...

Embodiment 2

[0057] Such as Figure 3-4 As shown, the group III nitride quantum well-metal-quantum dot hybrid structure hybrid white LED device of this embodiment includes:

[0058] a sapphire substrate;

[0059] an n-type GaN layer grown on the substrate;

[0060] An In grown on the n-type GaN layer x Ga 1-x N / GaN quantum well active layer;

[0061] a p-type GaN layer grown on the quantum well active layer;

[0062] An ordered metal nanohole array, the metal nanohole array is arranged on the surface of the p-type GaN layer, and the gaps of the metal nano grating array are filled with II-VI group quantum dots.

[0063] A p-type electrode fabricated on the metal nanohole array;

[0064] An n-type electrode fabricated on the n-type GaN layer;

[0065] The thickness of the n-type GaN layer is 2um;

[0066] The quantum well active region x is 0.22, the emission wavelength is 465nm, the quantum well period is 10, and the thickness is 30nm;

[0067] The thickness of the p-type GaN layer...

Embodiment 3

[0071] Such as Figure 5-6 As shown, the group III nitride quantum well-metal-quantum dot hybrid structure hybrid white LED device of this embodiment includes:

[0072] a sapphire substrate;

[0073] an n-type GaN layer grown on the substrate;

[0074] An In grown on the n-type GaN layer x Ga 1-x N / GaN quantum well active layer;

[0075] a p-type GaN layer grown on the quantum well active layer;

[0076] annealing to form a disordered metal nano-layer, the metal nano-layer is arranged on the surface of the p-type GaN layer, and the gap of the metal nano-layer is filled with II-VI group quantum dots.

[0077] One ITO layer;

[0078] A p-type electrode is made on the ITO layer;

[0079] An n-type electrode fabricated on the n-type GaN layer;

[0080] The thickness of the n-type GaN layer is 2um;

[0081] The thickness of the ITO layer is 100nm;

[0082] The quantum well active region x is 0.22, the emission wavelength is 465nm, the quantum well period is 10, and the th...

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Abstract

The invention discloses a mixed white light LED device with a III-group nitride quantum well-metal-quantum dot mixed structure, which comprises: a substrate; a nitride quantum well plane structure growing on the substrate; a metal nano layer-quantum dot mixed structure or a metal nano particle-quantum dot mixed structure growing on the nitride quantum well plane structure; a p-type electrode; an n-type electrode, wherein the nitride quantum well plane structure comprises an n-type metal nitride layer grown on the substrate; a quantum well active layer grown on the n-type metal nitride layer; and a p-type metal nitride layer grows on the quantum well active layer, wherein the n-type electrode is manufactured on the n-type metal nitride layer. The mixed white light LED device with the III-group nitride quantum well-metal-quantum dot mixed structure can achieve resonance energy transfer in a larger distance range and a faster energy transfer rate.

Description

Technical field: [0001] The invention relates to a group III nitride quantum well-metal-quantum dot mixed white light LED device, which belongs to the technical field of semiconductor lighting. Background technique: [0002] LED devices based on III-nitride semiconductors have achieved great success and quickly completed commercialization, but their luminous efficiency and quality problems are still the main constraints of III-nitride white LEDs, and are currently used for lighting and lighting. It is one of the important research topics in the display field. [0003] At present, commercial white LEDs mainly use nitride blue LED chips to excite yellow phosphors (such as yttrium aluminum garnet Y 3 al 5 o 12 : Ce 3+ ,YAG) for combined luminescence, in which the yellow phosphor mainly depends on the absorption of blue light to excite and radiate light. Although this combined light emitting method is relatively simple, it still faces two important challenges: First, for th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/06H01L33/08
CPCH01L33/06H01L33/08
Inventor 庄喆姜海涛张雄崔一平
Owner SOUTHEAST UNIV
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