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Use of top gate bottom contact structure device for constructing biosensor

A biosensor and substrate technology, applied in the field of biosensors, can solve the problems of complicated types of cancer markers, stability and selectivity to be improved, and increased consumption of financial and material resources

Inactive Publication Date: 2019-10-29
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the overall performance of this type of sensor, especially the stability and selectivity shown when detecting solution-phase substances, needs to be improved.
At the same time, there are many kinds of human cancer diseases, and the types of different cancer markers are complex. The traditional method of one-by-one detection greatly increases the consumption of financial and material resources, which is also a challenge in promoting practical applications.

Method used

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  • Use of top gate bottom contact structure device for constructing biosensor
  • Use of top gate bottom contact structure device for constructing biosensor
  • Use of top gate bottom contact structure device for constructing biosensor

Examples

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preparation example Construction

[0080] The preparation method of the silane coupling agent solution is as follows: add the silane coupling agent to the ethanol aqueous solution, and mix uniformly to obtain the silane coupling agent solution, wherein, in parts by volume, the ratio of ethanol to water in the ethanol aqueous solution is 90:5 ; In parts by volume, the ratio of silane coupling agent to ethanol aqueous solution is 1:99;

[0081] The preparation method of GO solution is as follows: in a beaker, 40 parts by volume of concentrated H 2 SO 4 and 2 parts by mass of NaNO 3 Mix evenly, react for 15min under ice bath conditions (the temperature of ice bath conditions is 3°C), and wait until concentrated H 2 SO 4 (concentrated H 2 SO 4 The concentration is 98wt%) and NaNO 3 When the temperature of the mixture is lower than 5°C, add 2 parts by mass of 8000-mesh graphite powder to the mixture and stir for 15 minutes to mix evenly, then add 7 parts by mass of KMnO 4 , react at room temperature 20-25°C f...

Embodiment 1～4

[0086] The preparation method of the above-mentioned fully covalently bonded fully reduced graphene oxide field effect transistor comprises the following steps:

[0087] In step 1, the substrate is treated with plasma for 10 minutes in an oxygen environment; the oxygen environment is realized by feeding an oxygen gas flow of 20 sccm, and the rf power is 200W when plasma is used to treat the substrate.

[0088] Step 2, preparing the GO layer for the first time: repeating the method of preparing the GO monolayer 5 times on the substrate obtained in step 1, to form a GO layer composed of multiple GO monolayers on the substrate;

[0089] Step 3, under reducing atmosphere conditions, place the substrate obtained in step 2 in a tube furnace at T 1 °C for 12 hours to obtain a substrate loaded with an RGO layer; the heating rate of the tube furnace was 5 °C / min.

[0090] Step 4, paste the mask plate on the substrate loaded with the RGO layer obtained in step 3, then vapor-deposit an ...

Embodiment 5

[0099] A method for constructing a biosensor by fully covalently connecting fully reduced graphene oxide field-effect transistors, comprising the following steps:

[0100] 1) With a source electrode and a drain electrode as a FET, 10 μL of cross-linking agent solution (solvent is 1× PBS) and incubated for 0.5h, rinsed the surface of the fully covalently bonded fully reduced graphene oxide field-effect transistor with phosphate buffered saline solution (0.1×PBS), wherein, the crosslinking agent in the crosslinking agent solution was pentamethylene Dialdehyde, the volume concentration of glutaraldehyde in the crosslinking agent solution is 3%;

[0101] 2) Add the antibody solution dropwise on the surface of the FET and incubate at room temperature 20-25° C. for 1 h, wherein the volume of the antibody solution is 5 μL, and the concentration of the antibody in the antibody solution (solvent is 1×PBS) is 100 μg mL -1 K and K are shown in Table 2 for details.

[0102] 3) Rinse the...

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Abstract

The invention discloses the use of a top gate bottom contact structure device for constructing a biosensor. A method comprises the steps of dropwise adding a cross-linking agent solution to a fully covalently bonded fully reduced graphene oxide field effect transistor and incubating the FET, and rinsing the surface of the FET with a phosphate buffered saline solution; dropwise adding an antibody solution to the surface of the FET and incubating the FET at room temperature for 1 to 2 hours; rinsing the surface of the FET with the phosphate buffered saline solution, and dropwise adding a sealingagent to the surface of the FET for reacting; rinsing the surface of the FET with the phosphate buffered saline solution, drying the FET at room temperature for at least 2s, and then testing the transfer curve of the FET and obtaining a Dirac point value D1; dropwise adding a solution to be tested to the surface of the FET, incubating the FET at room temperature for 1-3 hours, rinsing the surfacethe FET with the phosphate buffered saline solution, drying the FET at room temperature for at least 2s, testing the transfer curve and obtaining a Dirac point value D2; and calculating [delta]D = D2-D1 and recording the [delta]D as an sensor output signal. The biosensor can achieve a purpose of simultaneously detecting different kinds of cancer markers.

Description

technical field [0001] The invention belongs to the technical field of biosensors, and in particular relates to the application of a device with a top-gate-bottom-contact structure in building biosensors. Background technique [0002] Early diagnosis of cancer can realize early detection and early treatment of cancer, thereby significantly improving the pertinence of treatment and the survival rate of patients. Currently in clinical diagnosis, detection of cancer markers is recognized as an effective method for early diagnosis of cancer. Graphene-based field-effect transistors are considered to be an effective carrier for the construction of immunosensors, which can meet the needs of providing cheap, label-free, fast and easy real-time detection. However, the overall performance of this type of sensor, especially the stability and selectivity for the detection of solution-phase substances, needs to be improved. At the same time, there are many kinds of human cancer disease...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N33/574
CPCG01N33/57484
Inventor 程姗姗张丛丛陈鹏磊胡文平王利维王勇卢小泉司珂
Owner TIANJIN UNIV
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