Bottom gate bottom contact structure device and preparation method thereof
A conditional, silicon wafer technology, applied in the field of bottom-gate and bottom-contact structure devices and its preparation, can solve the problems of various types of cancer markers, increased consumption of financial and material resources, stability and selectivity to be improved, etc.
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[0079] The preparation method of the silane coupling agent solution is as follows: add the silane coupling agent to the ethanol aqueous solution, and mix uniformly to obtain the silane coupling agent solution, wherein, in parts by volume, the ratio of ethanol to water in the ethanol aqueous solution is 95:5 ; In parts by volume, the ratio of silane coupling agent to ethanol aqueous solution is 1:99;
[0080] The preparation method of GO solution is as follows: in a beaker, 40 parts by volume of concentrated H 2 SO 4 and 2 parts by mass of NaNO 3 Mix evenly, react for 15min under ice bath conditions (the temperature of ice bath conditions is 3°C), and wait until concentrated H 2 SO 4 (concentrated H 2 SO 4 The concentration is 98wt%) and NaNO 3 When the temperature of the mixture is lower than 5°C, add 2 parts by mass of graphite powder of 8000 mesh and stir for 15 minutes to mix evenly, then add 7 parts by mass of KMnO 4 , react at room temperature 20-25°C for 2h, then ...
Embodiment 1~4
[0089] The preparation method of the above-mentioned fully covalently bonded fully reduced graphene oxide field effect transistor comprises the following steps:
[0090] Step 1, under oxygen environment, use plasma to carry SiO 2 The silicon wafer of layer is processed 10min; Oxygen environment is to pass into the oxygen flow of 20sccm to realize, use plasma to have SiO 2 The rf power when processing the silicon wafer of the first layer is 200W.
[0091] Step 2, prepare GO layer for the first time: Repeat the method of preparing GO monolayer 5 times on the silicon wafer obtained in step 1, to 2 A GO layer consisting of multiple GO monolayers is formed on the layer;
[0092] Step 3, under the condition of reducing atmosphere, place the silicon chip obtained in step 2 in a tube furnace at T 1 °C for 12 hours to obtain a silicon wafer loaded with an RGO layer; the heating rate of the tube furnace was 5 °C / min.
[0093] Step 4, paste the mask plate on the silicon wafer loaded ...
Embodiment 5
[0101] A method for constructing a biosensor by fully covalently connecting fully reduced graphene oxide field-effect transistors, comprising the following steps:
[0102] 1) With a source electrode and a drain electrode as a FET, 10 μL of cross-linking agent solution (solvent is 1× PBS) and incubated for 0.5h, rinsed the surface of the fully covalently bonded fully reduced graphene oxide field-effect transistor with phosphate buffered saline solution (0.1×PBS), wherein, the crosslinking agent in the crosslinking agent solution was pentamethylene Dialdehyde, the volume concentration of glutaraldehyde in the crosslinking agent solution is 3%;
[0103] 2) Add the antibody solution dropwise on the surface of the FET and incubate at room temperature 20-25° C. for 1 h, wherein the volume of the antibody solution is 5 μL, and the concentration of the antibody in the antibody solution (solvent is 1×PBS) is 100 μg mL -1 K and K are shown in Table 2 for details.
[0104] 3) Rinse the...
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