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Multi-section type diode element with a double-series-connection polycrystalline group structure

A diode element and multi-segment technology, which is applied in the field of multi-segment double-series polycrystalline group structure diode elements, can solve the problems of too long element body, adjustment of the number of crystal groups and/or layers, and complexity, etc., to achieve enhanced element characteristics, The effect of simplifying the manufacturing process and reducing the volume

Pending Publication Date: 2019-10-29
吴文湖
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] Traditional diode packages are roughly divided into shaft type, SMD, SOD, etc. Generally, high-voltage and high-power components are still dominated by shaft-type packaging, SMD packaging is more suitable for general power components, and smaller packages such as SOD are more suitable for low-power low-voltage components. , these packaging methods are already familiar to the world, so I won’t go into details here; however, the biggest problem with the axial package is that the component body is too long or too high, which is suitable for the plug-in assembly process and is not suitable for the miniaturized surface mount assembly process. And requirements; traditional SMD, SOD and other packages are mainly combined with a group of dies by the upper and lower two racks, but because the height of the racks and pins are fixed, it is impossible to adjust the number of die groups and / or according to different needs layers
[0003] In recent years, there are also other unique manufacturing methods in the existing technology of surface mount components, such as: pre-attaching the lines or conductive electrodes required for component assembly to the upper and lower circuit boards (substrates), and then Bond the two circuit boards with the crystal grains to be assembled up and down, and cut each unit element by cutting operation, and then connect different electrodes to the same surface. The method of grouping dies is similar, but it is still a bit complicated, and the number of die groups and / or layers cannot be adjusted according to different needs, and it is generally only suitable for small-sized and low-power components; Fabricate light-emitting diode elements on the substrate, and then bond the elements on the substrate with another substrate with a preset combination circuit, and then remove the original substrate after bonding, so that the electrodes on one side of the elements are exposed to facilitate subsequent electrode conduction operations. This process must be combined with complex processes such as wafer manufacturing, double-substrate and single-machine board interchange, and double-conduction. Although it is suitable for the manufacture of light-emitting diodes, it cannot meet the assembly requirements of non-luminous power components. It is directly adopted by the present invention (2N-1 ) The construction methods of the upper and lower guide plates are quite different, and because the construction method cannot be multi-layered, the construction of general power diode components is still not flexible enough
[0004] Looking at the methods of the above and other related inventions, no matter whether the component structure is a combination of double sheets, double PC boards, or a single sheet (substrate) plus clip or other conductive layers, it is impossible to simultaneously meet the requirements of flexible assembly, high voltage, high power, and small size. The five-in-one requirement of volume and cost reduction; the present invention is designed to meet this requirement

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  • Multi-section type diode element with a double-series-connection polycrystalline group structure
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  • Multi-section type diode element with a double-series-connection polycrystalline group structure

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Embodiment Construction

[0051] Such as Figure 1 to Figure 4 As shown, it is an example of a power-type diode element with a multi-stage double-series polycrystalline group structure of the present invention, N≦2, and the number of layers≦2. figure 1 It is a schematic diagram of the structure of the unidirectional twin crystal group (1,1), where N=1, 2N=2, the number of layers=1, the structure of the unidirectional twin crystal group, a first crystal group 10 and a 2Nth The crystal group 20 (the second (2N=2, hereinafter the same as omitted) crystal group) is configured on the lower guide plate 30; wherein the bottom surfaces of the first crystal group 10 and the 2N crystal group 20 (the second crystal group) are respectively connected to the lower surface The guide plate 30 is electrically connected with a tin material 11, an electrode plate 12 and an electrode plate 22 are arranged on the top surface, and the outer circumference of the first crystal group 10 and the 2N crystal group 20 (second crys...

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Abstract

The invention discloses a multi-section type diode element with a double-series-connection polycrystalline group structure. The element comprises 2N crystal groups (N is an integer greater than or equal to 1), the top surfaces of the front (first crystal group) and the rear (2Nth crystal group) crystal groups are each provided with a first electrode and a second electrode which take an electrode plate as an element; N lower guide plates connect the bottom surfaces of the 2N crystal groups pairwise, (N-1) upper guide plates connect the top surfaces of the (2N-2) crystal groups except the frontand rear crystal groups pairwise to form a complete diode element structure, and insulating substances are arranged between the crystal groups except the electrode plates of the first and second electrodes and at the peripheries of the crystal groups; the number of the crystal groups can be adjusted at will according to the electrical requirements of component packaging, the number of layers of each crystal group can be different, and the element is particularly suitable for packaging of components such as small-size, high-power and / or high-voltage-withstanding rectifier diodes or surge suppression protection type diodes and the like.

Description

technical field [0001] The present invention is a multi-segment double-series polycrystalline group structure diode element, and the technical content involves assembling 2N crystal groups with corresponding upper and lower guide plates to form a diode element, so that the diode element has high power, High pressure resistance, flexible assembly and small size characteristics. Background technique [0002] Traditional diode packages are roughly divided into shaft type, SMD, SOD, etc. Generally, high-voltage and high-power components are still dominated by shaft-type packaging, SMD packaging is more suitable for general power components, and smaller packages such as SOD are more suitable for low-power low-voltage components. , these packaging methods are already familiar to the world, so I won’t go into details here; however, the biggest problem with the axial package is that the component body is too long or too high, which is suitable for the plug-in assembly process and is...

Claims

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Application Information

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IPC IPC(8): H01L25/07H01L23/488H01L21/60
CPCH01L25/071H01L25/072H01L24/32H01L24/83H01L2224/32145H01L2224/32175H01L2224/832H01L2224/40137H01L2224/33181H01L2924/181H01L2224/32245H01L2924/00012
Inventor 林慧敏吴文湖
Owner 吴文湖