A kind of p-type monocrystalline perc battery and its manufacturing method
A production method and battery technology, applied in circuits, electrical components, photovoltaic power generation, etc., can solve problems such as attenuation, increased manufacturing costs, and decreased efficiency of batteries and components
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Embodiment 1
[0035]Step S1, the surface texture, also known as the alkali, i.e., the wafer substrate 4 is corroded by the base solution, forming a pyramid surface morphology, wherein the reaction base solution: 1.2 wt% of the reaction base solution: 1.2 wt% NaOH, reaction time: 400s, temperature: 80 ° C, reflectance after treatment: 11%;
[0036]Step S2, phosphorus diffusion, wherein the nitrogen flow: 700sccm, oxygen flow: 800sccm, reaction time: 88min, temperature: 800 ° C, diffusion square resistance: 120Ω / □; re-laser doping method In the front electrode 1 region to form a heavy dial The square resistance is: 95Ω / □;
[0037]Step S3, the periphery etching and back polishing, using a concentration of 49% of the HF acid solution to dissolve the back surface and the edge of the silicon wafer after diffusion of the step S2, and then polished the back surface of the silicon wafer using a concentration of 45% of KOH and polishing additives. Treatment, weight loss: 0.25g, back reflectance: 42%;
[0038]St...
Embodiment 2
[0045]Step S1, the surface texture, also known as the alkali, i.e., the wafer substrate 4 is corroded by the base solution, forming a pyramid surface morphology, wherein the reaction base solution: 1.2 wt% of the reaction base solution: 1.2 wt% NaOH, reaction time: 400s, temperature: 80 ° C, reflectance after treatment: 11%;
[0046]Step S2, phosphorus diffusion, wherein the nitrogen flow: 700sccm, oxygen flow: 800sccm, reaction time: 88min, temperature: 800 ° C, diffusion square resistance: 120Ω / □; re-laser doping method In the front electrode 1 region to form a heavy dial The square resistance is: 95Ω / □;
[0047]Step S3, the periphery etching and back polishing, using a concentration of 49% of the HF acid solution to dissolve the back surface and the edge of the silicon wafer after diffusion of the step S2, and then polished the back surface of the silicon wafer using a concentration of 45% of KOH and polishing additives. Treatment, weight loss: 0.25g, back reflectance: 42%;
[0048]St...
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