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Electromagnetic wave detector, electromagnetic wave detector array, and electromagnetic wave detection method

An electromagnetic wave and detector technology, which is applied in the field of electromagnetic wave detectors to achieve the effects of high sensitivity, high detection sensitivity and wide wavelength band

Active Publication Date: 2019-10-29
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] In conventional electromagnetic wave detectors, semiconductor materials are generally used as the electromagnetic wave detection layer, but since semiconductor materials have a predetermined band gap, only electromagnetic waves with energy greater than the band gap can be detected

Method used

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  • Electromagnetic wave detector, electromagnetic wave detector array, and electromagnetic wave detection method
  • Electromagnetic wave detector, electromagnetic wave detector array, and electromagnetic wave detection method
  • Electromagnetic wave detector, electromagnetic wave detector array, and electromagnetic wave detection method

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Embodiment approach 1

[0093] Figure 1A It is a plan view of the electromagnetic wave detector according to Embodiment 1 of the present invention, indicated by 100 as a whole, Figure 1B For viewing from 1B-1B direction Figure 1A A cross-sectional view of the case of the electromagnetic wave detector 100. in addition, Figure 1C It is a circuit diagram of the electromagnetic wave detector 100 according to Embodiment 1 of the present invention.

[0094] Such as Figure 1A , 1B As shown, the electromagnetic wave detector 100 includes a substrate 6 . The substrate 6 holds the entire electromagnetic wave detector 100 and is formed of a semiconductor material such as silicon. For example, a high-resistance silicon substrate or a substrate with improved insulation by forming a thermal oxide film is used. Alternatively, as will be described later, when using the substrate 6 as the back gate, a doped silicon substrate may also be used.

[0095] A layer comprising, for example, silicon oxide (SiO 2 ),...

Embodiment approach 2

[0126] Figure 3A It is a plan view of the electromagnetic wave detector according to Embodiment 2 of the present invention, indicated by 200 as a whole, Figure 3B For viewing from IIIB-IIIB direction Figure 3A A cross-sectional view of the case of the electromagnetic wave detector 200. exist Figure 3A , 3B in, with Figure 1A , 1B The same reference numerals indicate the same or corresponding parts.

[0127] In the electromagnetic wave detector 200 , an insulating layer 5 is formed on a substrate 6 , and a pair of electrodes 3 and 4 are provided on the insulating layer 5 . Graphene 11 is provided on insulating layer 5 so that both ends thereof are connected to electrodes 3 and 4 , respectively. In addition, a modulation circuit 15 for temporally varying the gate voltage is connected to the substrate 6 also serving as a gate electrode. In addition, a detection circuit 16 for detecting a differential photocurrent is connected between the electrodes 3 and 4 . The dete...

Embodiment approach 3

[0136] Figure 7A is a circuit diagram of an electromagnetic wave detector according to Embodiment 3 of the present invention, indicated by 300 as a whole, Figure 7B This is a circuit of the electromagnetic wave detector 300 according to Embodiment 3 of the present invention. exist Figure 7A , 7B in, with Figure 1C , 1D The same reference numerals indicate the same or corresponding parts.

[0137] The electromagnetic wave detector 300 of Embodiment 3 is different from the electromagnetic wave detector 100 of Embodiment 1 in that, as Figure 7A As shown, a differential amplifier circuit 10 is connected to the electrode 3 as a detection circuit. In the electromagnetic wave detector 100, it is necessary to use the balance circuit 8 to balance the circuit, but in the electromagnetic wave detector 300, since the differential current flowing through the p-type graphene 1 and the n-type graphene 2 in the bright state is used as The input of the differential amplifier circui...

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Abstract

An electromagnetic wave detector comprises: p-type and n-type graphenes arranged side by side on an insulating layer; a first electrode and a second electrode opposing each other via the graphenes; agate electrode for applying an operation voltage to the p-type and n-type graphenes; a balance circuit connected between two second electrodes; and a detection circuit. The p-type graphene has a Diracpoint voltage higher than the operation voltage. The n-type graphene has a Dirac point voltage lower than the operation voltage. In a state in which no electromagnetic wave is incident on the graphenes, the balance circuit places the first electrode and the second electrode at the same potential. In a state in which an electromagnetic wave is incident on the p-type and n-type graphenes, the detection circuit detects an electric signal between the second electrodes, and outputs an electric signal in the state in which the electromagnetic wave is incident.

Description

technical field [0001] The invention relates to an electromagnetic wave detector, an electromagnetic wave detector array and an electromagnetic wave detection method, in particular to an electromagnetic wave detector using graphene as a detection layer, an electromagnetic wave detector array and an electromagnetic wave detection method. Background technique [0002] In conventional electromagnetic wave detectors, a semiconductor material is generally used as an electromagnetic wave detection layer, but since the semiconductor material has a predetermined band gap, only electromagnetic waves having energy greater than the band gap can be detected. In this regard, as a material for the electromagnetic wave detection layer of the next-generation electromagnetic wave detector, graphene with a bandgap of zero or extremely small has attracted attention. The channel layer is an electromagnetic wave detector in which a source and a drain are formed at both ends of the channel layer ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/02H01L31/08
CPCH01L31/02019H01L31/02164H01L31/028H01L31/0288H01L31/0232H01L31/113H01L27/1443H01L27/1446H01L31/022408H01L31/1136H01L31/1804
Inventor 岛谷政彰小川新平藤泽大介奥田聪志
Owner MITSUBISHI ELECTRIC CORP
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