High-frequency low-noise amplifier circuit structure

A low-noise amplifier and circuit structure technology, applied in the field of amplifiers, can solve problems such as insufficient gain, large layout area, and low gain, and achieve stable DC working conditions, reduce manufacturing costs, and reduce layout area.

A low-noise amplifier and circuit structure technology, applied in the field of amplifiers, can solve problems such as insufficient gain, large layout area, and low gain, and achieve stable DC working conditions, reduce manufacturing costs, and reduce layout area.

CN110401422APending Publication Date: 2019-11-01KTD ELECTRONICS
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  • High-frequency low-noise amplifier circuit structure
  • High-frequency low-noise amplifier circuit structure
  • High-frequency low-noise amplifier circuit structure

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Such as image 3 As shown, in Embodiment 1 of the present invention, a high-frequency low-noise amplifier circuit structure includes a signal input terminal Input, a radio frequency amplifier circuit 1, a load 2, and a signal output terminal Output; wherein the radio frequency amplifier circuit 1 includes a stage A first-stage amplifying circuit 11 and a second-stage amplifying circuit 12 connected together; the first-stage amplifying circuit 11 is a single-ended amplifying circuit, and the first-stage amplifying circuit 11 includes a first field effect transistor MN1 and a fourth resistor R4; the second-stage amplifying circuit The circuit 12 is a single-ended amplifying circuit, and the secondary amplifying circuit 12 includes a second field effect transistor MN2, a first resistor R1, a second resistor R2, a third resistor R3 and a bypass capacitor C1; the load 2 is a load inductance L1 ; The gate of the first field effect transistor MN1 is connected to the signal inp...

Embodiment 2

[0034] Cooperate Figure 4As shown, the difference between the second embodiment of the present invention and the first embodiment is that: in the first embodiment, the second end of the fourth resistor R4 is directly connected to the first end of the load inductance L1 and the signal output end Output; and In the second embodiment, the second end of the fourth resistor R4 is connected to the first end of the load inductance L1 and the signal output terminal Output through the filter resistor R0 and the first filter capacitor C2, wherein the first end of the filter resistor R0 is connected to The first end of the load inductance L1 and the signal output end Output, the second end of the filter resistor R0 is connected to the first end of the first filter capacitor C2 and the second end of the fourth resistor R4, and the second end of the first filter capacitor C2 is grounded , the filter resistor R0 and the first filter capacitor C2 form an attenuation network to prevent the r...

Embodiment 3

[0036] Cooperate Figure 5 As shown, the difference between the third embodiment of the present invention and the second embodiment is that in the second embodiment, the first end of the first resistor R1 is directly connected to the gate of the first field effect transistor MN1 and the signal input terminal Input In the third embodiment, the first end of the first resistor R1 is connected to the gate of the first field effect transistor MN1 and the signal input terminal Input through a quarter filter FG and a second filter capacitor C3; The first end of the quarter filter FG is connected to the first end of the second filter capacitor C3 and the first end of the first resistor R1, the second end of the second filter capacitor C3 is grounded, and the quarter filter FG The second terminal is connected to the gate of the first field effect transistor MN1 and the signal input terminal Input; the quarter-wavelength filter FG, the third capacitor C3 and the first resistor R1 can fo...

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Abstract

The invention discloses a high-frequency low-noise amplifier circuit structure. The circuit structure comprises a signal input end, a radio frequency amplification circuit, a load and a signal outputend. The radio frequency amplifying circuit comprises a first-stage amplifying circuit and a second-stage amplifying circuit which are cascaded, and the radio frequency amplifying circuit is of a self-biased structure. The structure has the advantages of simple structure and good noise performance.

Description

technical field [0001] The invention relates to the field of amplifiers, in particular to a circuit structure of a high-frequency low-noise amplifier. Background technique [0002] As the pre-radio frequency signal amplifier of the radio receiver, the low noise amplifier needs to amplify the radio frequency signal under the premise of generating noise as low as possible, so as to reduce the influence of the noise generated by the subsequent modules on the signal. [0003] Such as figure 1 As shown, the traditional low-noise amplifier used in satellite TV receivers usually consists of two cascaded FET amplifiers to achieve extremely low noise figure, high signal gain and good stability. Its circuit structure mainly includes a primary amplifier circuit 1', a secondary amplifier circuit 2', a first bias circuit 3' and a second bias circuit 4', the primary amplifier circuit 1' includes a first field effect transistor MN1', The secondary amplifying circuit 2' includes a second ...

Claims

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Application Information

Patent Timeline
01 Nov 2019
Publication
CN110401422A
IPC
H03F1/26; H03F3/16; H04B1/16
CPC
H03F1/26; H03F3/165; H04B1/16
Inventors
王建钦; 邱芳