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A radio frequency low noise amplifier design with high gain

A low-noise amplifier, high-gain technology, applied in the field of RF low-noise amplifier design, to achieve easy mass production, achieve gain and noise performance, and achieve a compromise effect

Pending Publication Date: 2020-04-07
TIANJIN UNIV MARINE TECH RES INST
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Problems solved by technology

[0005] Aiming at the difficult problem of realizing a low noise amplifier, a radio frequency low noise amplifier with high gain adds an additional gain stage on the basis of the noise link, and achieves a compromise between gain and noise through current multiplexing technology, and finally realizes the Certain requirements for receiver noise and weak signal amplification

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  • A radio frequency low noise amplifier design with high gain
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Embodiment Construction

[0014] In order to illustrate the technical solution of the present invention more clearly, the present invention will be further described below in conjunction with the accompanying drawings.

[0015] A high-gain RF low-noise amplifier design, in order to achieve a compromise between the gain and noise of the low-noise amplifier, on the basis of having little effect on the noise figure, an additional gain stage is introduced in each stage of the LNA, and A differential structure is used to meet the design requirements.

[0016] Such as Figure 1 Shown: The design of the high-gain RF low-noise amplifier proposed in this patent adopts three differential stages for cascading, and each stage adopts a differential structure. In the first-stage design, noise optimization is mainly achieved, and a certain gain can also be provided to drive the second stage of the LNA. Then, both the second stage and the third stage of the LNA need to achieve relatively large gains to meet the gain...

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Abstract

According to a radio frequency low-noise amplifier design with high gain, high output power is achieved through differential three-level cascading to meet the requirement for normal work of a receiver, and meanwhile the compromise between a noise coefficient and the gain is obtained by additionally arranging the gain level on a unit design of the low-noise amplifier of each level; the method is based on a semiconductor process, is convenient to integrate with a transceiver system, is easy to realize large-scale mass production, and further reduces the cost of subsequent product development; through introduction an extra gain stage + three-stage cascade mode at each stage of a LNA, the whole LNA is ensured to provide enough gain for the receiver, and the normal work of the receiver is ensured; the LNA of each stage adopts a differential structure to construct a common-mode grounding point, so that parasitic parameters of a signal grounding point and the grounding imbalance of a circuitmodule are reduced; an extra gain stage is independently introduced, so that the influence on the noise performance of the whole circuit and the receiver is reduced, and the compromise between the gain and the noise performance is realized.

Description

technical field [0001] The invention belongs to the technical field of wireless communication low-noise amplifiers, in particular to the field of complementary metal-oxide-semiconductor (CMOS) radio-frequency low-noise amplifiers, that is, a high-gain radio-frequency low-noise amplifier design. Background technique [0002] Today, the rapid development of the wireless communication industry has become the biggest highlight of the information industry, and the design requirements for wireless communication systems are getting higher and higher, and the corresponding requirements for system indicators are also getting higher and higher. Among them, the Low Noise Amplifier (LNA for short) is an important factor affecting the noise index of the entire receiving system. LNA can not only reduce the clutter interference of the system and improve the sensitivity of the system, but also amplify the radio frequency signal of the system to ensure the normal operation of the system. Th...

Claims

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Application Information

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IPC IPC(8): H03F3/193H03F3/68
CPCH03F3/193H03F3/68H03F2200/451H03F2200/294
Inventor 马建国张蕾周绍华邹浩赵升杨自凯杨闯李旭光李昭张明哲
Owner TIANJIN UNIV MARINE TECH RES INST
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