Mode hopping-free frequency modulation control method for integrated external cavity semiconductor laser
A control method and laser technology, applied in semiconductor lasers, lasers, devices for controlling output parameters of lasers, etc., can solve the problems of slow tuning speed, large cavity size, expensive price, etc., and achieve simple tuning mechanism, miniaturized packaging, compact effect
Active Publication Date: 2019-11-08
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
View PDF15 Cites 4 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
This mechanical non-mode-hopping FM method is based on a specially designed tuning mechanism, which requires high precision in processing and assembly, and is very expensive.
In general, large-scale mode-hop-free tuning of lasers and high mechanical stability are still two difficult goals to meet simultaneously. In the manufacturing process, there are complex optical and mechanical alignments, additional materials for optical devices There are many problems such as cost, large cavity size, low integration and slow tuning speed, so VBG, FP, FBG and other external cavity semiconductor lasers have attracted people's attention due to their compact structure, miniaturization, and high integration. Large-scale continuous tuning is achieved through temperature tuning, but the mode-hop-free tuning range is limited due to the mismatch between the reflection spectrum of the feedback element and the thermal tuning of the longitudinal mode of the cavity. A control method for frequency modulation without mode hopping
[0005] In summary, there are many problems in the non-mode-hopping frequency modulation method proposed in the prior art, which limits the application of tunable external cavity semiconductor lasers in many fields. Stable, compact and highly integrated mode-hopping frequency modulation method
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
specific Embodiment
[0041] In this embodiment, the present invention is applied to a fiber grating hybrid external cavity semiconductor laser. The laser mainly includes a semiconductor gain chip, a fiber Bragg grating whose front end is ground into a tapered lens, a semiconductor refrigerator, a temperature controller, and a current controller. , the light output by the gain chip passes through the gain medium, and the light emitted by the gain medium is coupled into the fiber grating after passing through the tapered lens, and part of the reflected light returns to the gain medium along the original incident light path, oscillates and amplifies in the gain medium to exceed The laser oscillation threshold forms laser light, and the other part of the reflected light directly becomes the output first output laser light.
[0042] Step 1, press figure 2 Connect fiber grating external cavity semiconductor laser 1, current controller 2, temperature controller 3, fiber beam splitter 4, wavelength meter...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention discloses a mode hopping-free frequency modulation control method for an integrated external cavity semiconductor laser. The embodiment comprises at least one integrated external cavitysemiconductor laser, a current tuning device and a temperature tuning device. A current controller and a temperature controller are synchronously driven, the current changes the external cavity mode of the laser, the temperature changes the external cavity mode of the laser and the reflection spectrum center wavelength of an optical feedback component, the two modes are matched, and thus, mode hopping-free frequency modulation is realized. By using the above laser, mode hopping-free continuous tuning for the laser frequency can be realized, and the mode hopping-free tuning range of the laser is improved.
Description
technical field [0001] The invention relates to a frequency modulation method for an external cavity semiconductor laser, in particular to a mode-hopping frequency modulation control method for an integrated external cavity semiconductor laser. Background technique [0002] In many application fields such as interferometry, spectroscopy, optical communication, precision spectroscopy, atomic cooling and trapping, it is desirable to obtain a broadband tunable laser source without wavelength mode hopping. The laser mainly achieves the purpose of wavelength tuning by adjusting the resonator, and when the resonator is continuously tuned, the lasing mode of the laser sometimes produces a mode-hopping phenomenon, which is equivalent to the longitudinal mode interval of the laser at the output frequency of the laser. Frequency hopping, which in turn destroys the characteristics of continuous frequency tuning of the laser, will have an adverse effect on the accuracy of frequency tuni...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More IPC IPC(8): H01S5/06H01S5/062H01S5/065
CPCH01S5/0612H01S5/062H01S5/0651
Inventor 王吉魏芳陈迪俊蔡海文
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI