Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for preparing cuprous sulfide composite silicon carbide bulk thermoelectric material

A technology of compounding silicon carbide blocks and cuprous sulfide, which is applied in the manufacture/processing of thermoelectric devices, and lead-out wire materials of thermoelectric devices, can solve the problems of raw material hazards and high cost, and achieve moderate ball milling speed, safe compounding process and high efficiency. effective effect

Active Publication Date: 2019-11-12
SHANGHAI SECOND POLYTECHNIC UNIVERSITY
View PDF10 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these methods require multi-step reactions, the raw materials used contain greater hazards, and the required costs are high.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing cuprous sulfide composite silicon carbide bulk thermoelectric material
  • Method for preparing cuprous sulfide composite silicon carbide bulk thermoelectric material
  • Method for preparing cuprous sulfide composite silicon carbide bulk thermoelectric material

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0025] The invention provides a method for preparing a cuprous sulfide composite silicon carbide bulk thermoelectric material, comprising the following steps:

[0026] Step 1: Copper acetate monohydrate is used as the copper raw material, thioacetamide is used as the sulfur raw material, and diethylene glycol is used as the reducing agent. There is no need to prepare the precursor of the copper raw material in advance, and the reaction operation is simple;

[0027] Step 2: Add copper acetate monohydrate and thioacetamide into diethylene glycol respectively, after fully dissolving, pour the diethylene glycol solution of copper salt into a four-necked flask, and start the heating reaction; wherein, the reaction temperature 180-200 ℃; the concentration of the diethylene glycol mixture of copper acetate monohydrate is 0.025~0.030 mol / L, and the concentration of the diethylene glycol mixture of thioacetamide is 0.030~0.035 mol / L;

[0028] Step 3: When the temperature of the four-ne...

Embodiment 1

[0042] Pour 2.4 g of copper acetate monohydrate and 0.45 g of thioacetamide into 420 ml and 180 ml of diethylene glycol solutions respectively, heat the mixed solution of copper acetate monohydrate to 180 °C, then slowly add thioacetamide dropwise to mix The solution was added dropwise for 150 minutes, and the reaction was continued for 150 minutes. After washing with absolute ethanol and vacuum drying at 70 °C, the cuprous sulfide nanopowder was obtained, with an average particle size of 50 nm. The obtained powder and its weight 4% silicon carbide powder are composited in a planetary ball mill, the ball-to-material ratio is 20:1, the rotating speed is 200 rpm, and the composite time is 60 minutes, then the obtained cuprous sulfide composite silicon carbide The powder is put into a hot-pressing mold, and hot-pressed under vacuum at 500 °C for 60 minutes to obtain a cuprous sulfide composite silicon carbide bulk thermoelectric material.

[0043] figure 1 It is the XRD pattern of...

Embodiment 2

[0045] In the mechanical ball milling stage, the silicon carbide powder weight is changed to 1% of the cuprous sulfide powder, and all the other operations are the same as in Example 1.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle sizeaaaaaaaaaa
densityaaaaaaaaaa
Login to View More

Abstract

The invention discloses a method for preparing a cuprous sulfide composite silicon carbide bulk thermoelectric material. The method comprises the following steps: (1) dropping a diethylene glycol solution of thioacetamide to a diethylene glycol solution of a copper salt under a heating condition, then performing a heat preservation reaction, naturally cooling the product to room temperature, centrifugally separating and drying the product to obtain cuprous sulfide nanopowders; (2) adding the cuprous sulfide nanopowders and silicon carbide powders to a ball mill tank, then putting the ball milltank into a star ball mill for ball milling, after the ball milling, taking out and grinding a sample to obtain composite powders; and (3) subjecting the composite powders to vacuum hot-press formingto obtain a cuprous sulfide composite silicon carbide bulk material. The method uses the chemical precipitation to prepare the cuprous sulfide nano powders, is simple in process, and has a wide raw material source. The method for preparing the cuprous sulfide composite silicon carbide bulk thermoelectric material has a moderate ball milling speed and a safe and reliable effect when the cuprous sulfide and the silicon carbide are combined.

Description

technical field [0001] The invention belongs to the technical field of synthesis of semiconductor nanocomposite materials, and in particular relates to a method for preparing a cuprous sulfide composite silicon carbide bulk thermoelectric material. Background technique [0002] Since Ryozi Uyeda and others prepared ultrafine particles by condensation method (also known as gas evaporation method) in 1963, people began to study the preparation of nanostructure materials, and the preparation method and application research of semiconductor nanomaterials have always been a hot topic. . Especially in recent years, with the focus on energy-saving technology and new energy applications, the research on thermoelectric materials has increasingly become the focus of attention. In thermoelectric materials, the preparation of cuprous sulfide semiconductor nanomaterials has gradually become the focus of attention. Cu 2-x S (0≤x≤2) is a p-type semiconductor with complex structure. Wit...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L35/34H01L35/16H10N10/01H10N10/852
CPCH10N10/852H10N10/01
Inventor 吴子华林锦豪谢华清李奕怀
Owner SHANGHAI SECOND POLYTECHNIC UNIVERSITY