Semiconductor device and manufacturing method therefor, and power conversion device
A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, output power conversion devices, etc., can solve problems such as position deviation, achieve narrow configuration range, and suppress the decline in heat dissipation
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Embodiment approach 1
[0045] First, use Figure 1 to Figure 5 , a method of manufacturing a power module as a semiconductor device according to a first example of the present embodiment will be described. refer to figure 1 , in the method of manufacturing a power module according to the first example of the present embodiment, first, an insulating substrate 1 is prepared as a substrate. The insulating substrate 1 has, for example, a rectangular shape in plan view, but is not limited thereto, and may have other planar shapes such as a circle or an ellipse, for example. The insulating substrate 1 has a surface 1A and a back surface 1B opposite thereto. Here, as an example, it is assumed that the insulating substrate 1 has a square shape with dimensions of 100 mm×100 mm in plan view. In addition, although the insulating substrate 1 is not shown in the figure, it has, for example, an aluminum layer with a thickness of 0.3 mm, an aluminum nitride layer with a thickness of 0.6 mm, and an aluminum laye...
Embodiment approach 2
[0115] First, use Figure 9 ~ Figure 11 , the method of manufacturing the power module of the present embodiment will be described. The manufacturing method of the power module in this embodiment is basically the same as Figure 1 to Figure 5 The method of manufacturing the power module in Embodiment 1 is the same as that of Embodiment 1, and therefore descriptions of the same steps are omitted. In addition, below, the same code|symbol is attached|subjected to the same component as Embodiment 1, and the description is not repeated.
[0116] refer to Figure 9 , in this embodiment, after passing figure 2 After the semiconductor chip 5 on which the upper surface electrode 6 is formed is placed in the step of 20, the surfaces 5A, 6A of the semiconductor chip 5 and the upper surface electrode 6 are pressed (pressed) from above to below by the pressurizing jig 14 . Figure 10 was carried out Figure 9 The scheme after the pressing process. refer to Figure 11 , and further,...
Embodiment approach 3
[0125] First, use Figure 14 ~ Figure 19 , the method of manufacturing the power module of the present embodiment will be described. The manufacturing method of the power module in this embodiment is basically the same as Figure 1 to Figure 5 The method of manufacturing the power module in Embodiment 1 is the same as that of Embodiment 1, and therefore descriptions of the same steps are omitted. In the following, the same reference numerals are assigned to the same components as those in Embodiment 1, and the description thereof will not be repeated.
[0126] refer to Figure 14 , in this embodiment, also with figure 1 In the same manner as above, the wire protrusions 2 are placed on the surface 1A of the insulating substrate 1, and the first temporary fixing parts 3 are provided at four places so as to form a rectangle or a square surrounded by the outside when viewed from above in the direction of the arrangement. . However, in this embodiment, compared with Embodiment...
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Abstract
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