Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for rapidly etching and analyzing chemical state of material interface elements by using X-ray photoelectron spectrometer

A technology of photoelectron energy spectroscopy and interface elements, which is applied to the analysis of materials, material analysis using wave/particle radiation, instruments, etc., can solve the problems of inability to achieve rapid analysis and cannot truly reflect the chemical state of chemical elements in the film layer, and achieve reduction Analyze overall time, effect of increasing etch speed

Active Publication Date: 2019-11-22
HARBIN INST OF TECH
View PDF3 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to solve the problem of using only single particle mode (high energy argon ions) to etch the film analysis process when using compound semiconductor materials or transition group metal element compounds, which cannot truly reflect the chemical state of the actual film chemical elements. The cluster mode (low-energy argon ion) etches the film layer, which cannot realize the problem of fast analysis, and provides a method for quickly etching and analyzing the chemical state of material interface elements by using X-ray photoelectron spectroscopy

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for rapidly etching and analyzing chemical state of material interface elements by using X-ray photoelectron spectrometer
  • Method for rapidly etching and analyzing chemical state of material interface elements by using X-ray photoelectron spectrometer
  • Method for rapidly etching and analyzing chemical state of material interface elements by using X-ray photoelectron spectrometer

Examples

Experimental program
Comparison scheme
Effect test

specific Embodiment approach 1

[0017] Specific Embodiment 1: This embodiment is a method for quickly etching and analyzing the chemical state of material interface elements using an X-ray photoelectron spectrometer. It is completed in the following steps:

[0018] 1. Remove the surface layer:

[0019] The material is placed in an X-ray photoelectron spectrometer, and the etching area is selected as 1mm 2 ~4mm 2 , under the condition that the etching rate is 0.05nm / s-0.2nm / s, use Ar ion etching in single-particle mode until the position is 100nm-200nm away from the interface layer;

[0020] The material is composed of n layers of films, n≥2, and n is a positive integer;

[0021] Or the material is a substrate with a film material on the surface, and the film material is composed of m layers of films, m≥1, and m is a positive integer;

[0022] Second, the interface layer analysis:

[0023] Under the condition of etching speed of 0.0005nm / s~0.001nm / s, use Ar ion in cluster mode to etch to the interface lay...

specific Embodiment approach 2

[0029] Embodiment 2: The difference between this embodiment and Embodiment 1 is that the energy of the single particle mode described in Step 1 is 1000 eV-4000 eV. Others are the same as the first embodiment.

specific Embodiment approach 3

[0030] Embodiment 3: This embodiment differs from Embodiment 1 or Embodiment 2 in that the energy of the cluster mode described in step 2 is 500 eV-4000 eV. Others are the same as those in Embodiment 1 or 2.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a method for rapidly etching and analyzing the chemical state of a material interface element by using an X-ray photoelectron spectrometer and relates to a method for analyzingthe chemical state of the material interface element. The invention aims to solve that problem that the chemical state of an actual film chemical element cannot be truly reflected in the analysis process of etching a film layer only by adopting a single-particle mode when a semiconductor material compound or a transition group metal element compound is adopted, and the rapid analysis cannot be realized by adopting a cluster mode to etch the film layer. The method comprises the steps of (1) removing the surface layer in the single-particle mode, and (2) performing interface layer analysis in the cluster mode. The method is mainly used for analyzing the chemical state of the material interface element.

Description

technical field [0001] The invention relates to a method for analyzing the chemical state of material interface elements. Background technique [0002] With the development of semiconductor materials, the application of semiconductor devices in optoelectronic functions is becoming more and more extensive. For this type of device, it is not only necessary to analyze the surface of the semiconductor material itself, but more importantly, to analyze the chemical state of the elements at the interface between the device and the film layer, so as to effectively judge the application performance of the device (for example: between the device and the film layer). The size of the interface work function barrier and the adhesion characteristics between the layers of the film, etc.). X-ray photoelectron spectroscopy is an effective means to finely detect the state of surface chemical elements. In order to realize the interface analysis between film layers, argon ions can be used for...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01N23/2273G01N23/2202
CPCG01N23/2273G01N23/2202
Inventor 杨磊崔喜平张杰来忠红曾岗洪光辉李雪朱嘉琦
Owner HARBIN INST OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com