Method for rapidly etching and analyzing chemical state of material interface elements by using X-ray photoelectron spectrometer

A technology of photoelectron energy spectroscopy and interface elements, which is applied to the analysis of materials, material analysis using wave/particle radiation, instruments, etc., can solve the problems of inability to achieve rapid analysis and cannot truly reflect the chemical state of chemical elements in the film layer, and achieve reduction Analyze overall time, effect of increasing etch speed
CN110487833AActive Publication Date: 2019-11-22HARBIN INST OF TECH
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
HARBIN INST OF TECH
Publication Date
2019-11-22

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Abstract

The invention discloses a method for rapidly etching and analyzing the chemical state of a material interface element by using an X-ray photoelectron spectrometer and relates to a method for analyzingthe chemical state of the material interface element. The invention aims to solve that problem that the chemical state of an actual film chemical element cannot be truly reflected in the analysis process of etching a film layer only by adopting a single-particle mode when a semiconductor material compound or a transition group metal element compound is adopted, and the rapid analysis cannot be realized by adopting a cluster mode to etch the film layer. The method comprises the steps of (1) removing the surface layer in the single-particle mode, and (2) performing interface layer analysis in the cluster mode. The method is mainly used for analyzing the chemical state of the material interface element.
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Description

technical field

[0001] The invention relates to a method for analyzing the chemical state of material interface elements. Background technique

[0002] With the development of semiconductor materials, the application of semiconductor devices in optoelectronic functions is becoming more and more extensive. For this type of device, it is not only necessary to analyze the surface of the semiconductor material itself, but more importantly, to analyze the chemical state of the elements at the interface between the device and the film layer, so as to effectively judge the application performance of the device (for example: between the device and the film layer). The size of the interface work function barrier and the adhesion characteristics between the layers of the film, etc.). X-ray photoelectron spectroscopy is an effective means to finely detect the state of surface chemical elements. In order to realize the interface analysis between film layers, argon ions can be used for...

Claims

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