Silicon wafer resistivity measurement method, device and system based on total variation regularization method

Abstract

The invention discloses a silicon wafer resistivity measurement method, device and system based on a total variation regularization method. The method is mainly based on an electrical impedance imaging technology (EIT), and selects a boundary element method to solve a positive problem and the Newton Raphson algorithm to solve an inverse problem, and at the same time the total variation regularization method is used to correct the ill-conditioned nature of the inverse problem to achieve better results. The method solves the problem of large area contamination of a test silicon wafer, facilitates subsequent processing and manufacturing, can effectively measure the resistivity of the silicon wafer to acquire intuitive measurement results, and screens out unqualified silicon wafer products. Atthe same time, according to the invention, movable upper and lower electrode discs and a lifting test bench are adopted; two choice modes of eight electrodes or sixteen electrodes are provided, whichcan reduce the number of electrodes and improve the degree of automation; and after the silicon wafer is placed on the test bench, a user does not need to manually place the electrodes and adjust thepositions of the electrodes, which reduces human errors.

Description

technical field [0001] The invention relates to the technical field of semiconductor silicon wafer resistivity measurement, in particular to a silicon wafer resistivity measurement method, device and system based on a total variation regularization method, which is applied to the field of integrated circuit production. Background technique [0002] The continuous development of science and technology has made the application of integrated circuits based on single crystal silicon wafers more and more extensive. With the growth of the semiconductor industry, the requirements for product quality are getting higher and higher, and the quality process and product quality of semiconductor silicon wafers have strict management standards. In semiconductor processing and manufacturing, many important electrical parameters are directly related to the distribution of resistivity and the doping of micro-regions. The core issue in the design and manufacture of semiconductor devices is h...

AI Technical Summary

Problems solved by technology

This method solves the problem of large-area contamination of silicon wafers, facilitates subsequent processing and manufacturing, can effectively measure the resistivity of silicon wafers and obtain intuitive measurement results, and screen out unqualified silicon wafer products

Images