Two-dimensional material transistor based on a two-dimensional electron gas controllable back gate, manufacturing method and application

A technology of two-dimensional electron gas and two-dimensional materials, which is applied in the field of semiconductor electronic devices, can solve the problems of transistors, such as strict requirements on gate dielectric materials, poor repeatability, and large parasitic capacitance, so as to reduce device complexity and manufacturing costs, and achieve overall Simplified structure growth and reduced conduction loss
CN110504297AActive Publication Date: 2019-11-26SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
Publication Date
2019-11-26

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Abstract

The invention discloses a two-dimensional material transistor based on a two-dimensional electron gas controllable back gate, a manufacturing method and application thereof. The two-dimensional material transistor based on the two-dimensional electron gas controllable back gate includes a heterojunction including a first semiconductor and a second semiconductor formed on the first semiconductor, wherein the second semiconductor has a wider band gap than that of the first semiconductor, and a two-dimensional electron gas or two-dimensional hole gas is formed in the heterojunction; and a source,a drain, and a gate formed on the heterojunction, wherein the source and the drain are distributed on the second semiconductor, spaced apart from each other and are electrically connected through atwo-dimensional material, wherein the two-dimensional material is used as a conduction channel of the transistor, and the gate is electrically connected with the two-dimensional electron gas or two-dimensional hole gas. The two-dimensional material transistor based on the two-dimensional electron gas controllable back gate achieves a two-dimensional material transistor with a controllable back gate by using the high electron mobility of the two-dimensional electron gas.
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Description

technical field

[0001] The invention particularly relates to a two-dimensional material transistor based on a two-dimensional electron gas regulating back gate, a manufacturing method and an application, and belongs to the technical field of semiconductor electronic devices. Background technique

[0002] The emergence and successful preparation of two-dimensional materials such as graphene have injected new vitality into the development of various fields. The types of two-dimensional materials include metals, semiconductors and insulators. Among them, two-dimensional materials with semiconductor characteristics have broad applications in microelectronic devices. Application prospects. However, due to the limitations of the two-dimensional material itself, it is not suitable for making high-power and high-voltage devices. And due to the lack of effective performance characterization methods, the development of two-dimensional materials has been greatly restricted.

[0003] ...

Claims

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