Two-dimensional material transistor based on a two-dimensional electron gas controllable back gate, manufacturing method and application

A technology of two-dimensional electron gas and two-dimensional materials, which is applied in the field of semiconductor electronic devices, can solve the problems of transistors, such as strict requirements on gate dielectric materials, poor repeatability, and large parasitic capacitance, so as to reduce device complexity and manufacturing costs, and achieve overall Simplified structure growth and reduced conduction loss

Active Publication Date: 2019-11-26
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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  • Abstract
  • Description
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  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, the existing technology mostly uses a conductive substrate as the back gate, which has poor integration with other devices, and has a large parasitic capacitance, poor repeatability of the experiment, complex process, difficult operation, and cannot be mass-produced; and the existing transistor It is difficult to achieve the desired effect due to strict requirements on the gate dielectric material

Method used

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  • Two-dimensional material transistor based on a two-dimensional electron gas controllable back gate, manufacturing method and application
  • Two-dimensional material transistor based on a two-dimensional electron gas controllable back gate, manufacturing method and application
  • Two-dimensional material transistor based on a two-dimensional electron gas controllable back gate, manufacturing method and application

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preparation example Construction

[0062] Further, the preparation method of the two-dimensional material transistor based on the two-dimensional electron gas regulation back gate specifically includes: after the gate is fabricated on the heterojunction, rapid annealing is performed on the formed device structure, and the annealing temperature is 500 -1000°C, the time is 0.1-100min, so that an ohmic contact is formed between the gate and the two-dimensional electron gas or two-dimensional hole gas.

[0063] Further, the preparation method of the two-dimensional material transistor based on the two-dimensional electron gas regulation back gate specifically includes: forming an insulating dielectric layer on the second semiconductor, and then fabricating and forming the source on the insulating dielectric layer pole, drain.

[0064] Furthermore, the preparation method of the two-dimensional material transistor based on the two-dimensional electron gas regulation back gate specifically includes:

[0065] Transfer...

Embodiment 1

[0090] The structure of a two-dimensional material transistor based on a two-dimensional electron gas regulation back gate provided by this embodiment can be as follows Figure 6 As shown, it may include a buffer layer, a channel layer (also referred to as the first semiconductor), and a barrier layer (also referred to as the second semiconductor) sequentially arranged on the substrate, and the barrier layer is arranged at intervals There are source and drain, the source and drain are electrically connected by two-dimensional material, the gate is electrically connected with two-dimensional electron gas, the two-dimensional electron gas is formed in the heterogeneous layer composed of channel layer and barrier layer In the end.

[0091] A method for preparing a two-dimensional material transistor based on a two-dimensional electron gas regulation back gate provided in this embodiment may include the following steps:

[0092] 1) Using epitaxy techniques such as metal organic c...

Embodiment 2

[0100] Example 2: The structure of a two-dimensional material transistor based on a two-dimensional electron gas controlled back gate provided in this example can be found in Figure 7 As shown, the difference between it and the two-dimensional material transistor in Embodiment 1 is that an insulating dielectric layer is provided on the barrier layer, and the source, two-dimensional material, and drain are all disposed on the insulating dielectric layer.

[0101] The preparation method of the two-dimensional material transistor provided by this embodiment is basically the same as that of Embodiment 1, the difference is that: Step 1) also includes forming an insulating dielectric layer on the barrier layer, and using reactive ion etching or wet etching, etc. The etching method etches and removes the insulating dielectric layer in the area below the gate electrode, and then deposits the gate metal; or step 2) also includes, after forming the gate electrode, atomic layer depositio...

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Abstract

The invention discloses a two-dimensional material transistor based on a two-dimensional electron gas controllable back gate, a manufacturing method and application thereof. The two-dimensional material transistor based on the two-dimensional electron gas controllable back gate includes a heterojunction including a first semiconductor and a second semiconductor formed on the first semiconductor, wherein the second semiconductor has a wider band gap than that of the first semiconductor, and a two-dimensional electron gas or two-dimensional hole gas is formed in the heterojunction; and a source,a drain, and a gate formed on the heterojunction, wherein the source and the drain are distributed on the second semiconductor, spaced apart from each other and are electrically connected through atwo-dimensional material, wherein the two-dimensional material is used as a conduction channel of the transistor, and the gate is electrically connected with the two-dimensional electron gas or two-dimensional hole gas. The two-dimensional material transistor based on the two-dimensional electron gas controllable back gate achieves a two-dimensional material transistor with a controllable back gate by using the high electron mobility of the two-dimensional electron gas.

Description

technical field [0001] The invention particularly relates to a two-dimensional material transistor based on a two-dimensional electron gas regulating back gate, a manufacturing method and an application, and belongs to the technical field of semiconductor electronic devices. Background technique [0002] The emergence and successful preparation of two-dimensional materials such as graphene have injected new vitality into the development of various fields. The types of two-dimensional materials include metals, semiconductors and insulators. Among them, two-dimensional materials with semiconductor characteristics have broad applications in microelectronic devices. Application prospects. However, due to the limitations of the two-dimensional material itself, it is not suitable for making high-power and high-voltage devices. And due to the lack of effective performance characterization methods, the development of two-dimensional materials has been greatly restricted. [0003] ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L29/10H01L29/16H01L29/24H01L29/423H01L29/78H01L21/336H01L21/28
CPCH01L21/28H01L29/0684H01L29/1033H01L29/1606H01L29/24H01L29/42356H01L29/66484H01L29/7831H01L29/06H01L29/10H01L29/16H01L29/423H01L29/78
Inventor 于国浩丁晓煜宋亮张晓东蔡勇张宝顺
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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