Quantum dot light emitting diode and preparation method thereof
A quantum dot light-emitting and diode technology, which is applied in the manufacture of semiconductor/solid-state devices, electrical components, electric solid-state devices, etc., can solve the problems of too fast carrier migration, aggregation and light emission, etc., to improve luminous efficiency, increase recombination rate, The effect of simple and easy process
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[0025] On the other hand, the embodiment of the present invention also provides a method for preparing a quantum dot light-emitting diode, including the following steps:
[0026] S01: providing a ferromagnetic material, depositing the ferromagnetic material on a cathode or an anode, and growing a ferromagnetic material layer with a stripe pattern;
[0027]S02: Depositing quantum dot materials in the gaps of the ferromagnetic material layer with a stripe pattern to obtain a composite luminescent layer; wherein, the composite luminescent layer includes At least one quantum dot material strip unit and at least two ferromagnetic material strip units in the control carrier recombination region, and at least one quantum dot material strip unit is located in the two ferromagnetic material strip units between. .
[0028] In the method for preparing a quantum dot light-emitting diode provided in an embodiment of the present invention, at least one strip unit of quantum dot material a...
Embodiment 1
[0040] A new type of QLED device, the specific device structure is ITO / PEDOT:PSS / TFB / CdSe&Magnetic Layer / ZnO / Al; wherein, the Magnetic Layer is FeCoV.
[0041] In the specific preparation process of the new QLED device, except that the light-emitting layer is different from the standard device of Comparative Example 1 above, the rest of the steps are completely the same. The preparation process of the light-emitting layer of the new QLED device is as follows:
[0042] On the prepared HTL substrate, cover the mask plate Mask with a strip pattern on the substrate, and use magnetron sputtering to deposit ferromagnetic material on it to grow a strip pattern ferromagnetic material layer, where the iron The magnetic material is FeCoV, and its structure is as attached figure 2 shown. Subsequently, the CdSe quantum dot solution was drop-coated in the gap of the ferromagnetic material layer to form a light-emitting layer, and the processing steps and conditions thereafter were consi...
Embodiment 2
[0045] A new type of QLED device, the specific device structure is ITO / PEDOT:PSS / TFB / CdSe&Magnetic Layer / ZnO / Al; wherein, the Magnetic Layer is RuFeB.
[0046] In the specific preparation process of the new QLED device, except that the light-emitting layer is different from the standard device of Comparative Example 1 above, the rest of the steps are completely the same. The preparation process of the light-emitting layer of the new QLED device is as follows:
[0047] On the prepared HIL substrate, a layer of 40nm NdFeB magnetic material is grown in a strong magnetic field, coated with a layer of photoresist, exposed with a mask plate with a strip pattern, and then developed, using The magnetic material layer is etched by wet etching, and finally the glue is removed to form a strip pattern of the magnetic material, and the strip direction is perpendicular to the direction of the magnetic field. Subsequently, the CdSe quantum dot solution was drop-coated in the gap of the magn...
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