Power module

Abstract

This power module (2) includes at least one half bridge (1), and comprises, respectively in the upper and lower arms thereof: first transistors Q1, Q4; second transistors QM1, QM4, the drain of each of which being connected to the gate G1, G4 side of the respective first transistors, the source of each of which being connected to the source S1, S4 side; source signal wiring patterns SSP1, SSP4 connected to the source of the respective first transistors; first connection conductors MSW1, MSW4 connecting the respective source signal wiring patterns and the source of the respective second transistors; second gate signal wiring patterns MGP1, MGP4 connected to the gate MG1, MG4 of the respective second transistors; and second connection conductors MGW1, MGW4 connecting the respective second gate signal wiring patterns and the gate of the respective second transistors. The length of each first connection conductor is shorter than or equal to the length of each second connection conductor. Thus, a power module having a high-speed switching performance and in which malfunctions are suppressed is provided.

Description

technical field [0001] The invention relates to a power supply module. Background technique [0002] Currently, many research institutions are conducting research and development of silicon carbide (SiC: Silicon Carbide) devices. Features of SiC power devices include low on-resistance, high-speed switching, and high-temperature operation, which are superior to conventional Si power devices. [0003] Circuits including bridge circuits are widely used in switching power supplies, inverters for driving motors, and the like. In a bridge circuit composed of transistors, there is a phenomenon that when the transistor on one arm is turned on at high speed, the voltage between the gate and the source of the transistor on the other side changes due to the change in the voltage between the drain and the source. , resulting in malfunction (false conduction) (for example, refer to Patent Document 1). The short-circuit current caused by false conduction not only destroys the transisto...

AI Technical Summary

Problems solved by technology

In a bridge circuit composed of transistors, there is a phenomenon that when the transistor on one arm is turned on at high speed, the voltage between the gate and the source of the transistor on the other side changes due to the change in the voltage between the drain and the source. , resulting in malfunction (false conduction) (for example, refer to Patent Document 1)

Short-circuit current caused by false turn-on not only destroys transistors, but also causes increased power loss and noise

Especially in SiC MOSFET (Metal-Oxide Semiconductor Field Effect Transistor), the ratio of parasitic capacitance Cgs between gate and source to parasitic capacitance Cgd between gate and drain is small, so the voltage between gate and source varies greatly. In addition, The on-resistance is also low, so the short-circuit current caused by false conduction also increases, which easily leads to damage

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