High-efficiency crystalline silicon heterojunction solar cell silicon wafer cleaning device and method
A technology for cleaning solar cells and silicon wafers. It is used in the manufacture of circuits, electrical components, and semiconductor/solid-state devices.
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Embodiment 1
[0040] a. Adopt the above-mentioned cleaning method to carry out texturing and cleaning treatment to the N-type monocrystalline silicon wafer (180um) with a size of 156.75mm. The cleaning time is 50s for overflow and 70s for spraying;
[0041] b. The intrinsic amorphous silicon layer on the back is prepared by PECVD, and the 7nm deposition is completed in one step;
[0042] c. Selecting the n-type amorphous silicon film as the doped layer on the light-receiving surface. Using plasma-enhanced chemical vapor deposition to prepare an n-type amorphous silicon layer with a thickness of 6 nm;
[0043] d. Use plasma chemical vapor deposition to prepare a p-type amorphous silicon layer with a total thickness of 10 nm;
[0044] e. Use (RPD, PVD) method to deposit TCO conductive film with a thickness of 100nm;
[0045] f. Form front and back silver metal electrodes by screen printing;
[0046] g. Curing makes a good ohmic contact between the silver grid line and the TCO;
[0047] h....
Embodiment 2
[0049] Same as Example 1, except that the cleaning time is 70s for overflow and 50s for spraying.
Embodiment 3
[0051] Same as Example 1, except that the cleaning time is 90s for overflow and 30s for spraying.
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