Full-MOS voltage and temperature monitoring method and circuit

Abstract

The invention provides a full-MOS voltage and temperature monitoring method and monitoring circuit. The circuit comprises two annular oscillators RO1 and RO2, two time-digital converters TDC1 and TDC2, a temperature mapping module, a voltage mapping module, a reference clock frequency divider module and two compensation modules, wherein a reference block is provided by a crystal oscillator, poweris supplied to the annular oscillator RO1 through a core-domain power supply voltage VDD_CORE, power is supplied to the annular oscillator RO2 through a battery voltage VBAT, the reference clock is separately connected to the TDC1 and the TDC2 through the frequency divider, and output terminals of the TDC1 and the TDC2 are respectively connected to the temperature mapping module and the voltage mapping module. According to the method and circuit, real full MOS can be realized, extra masks are avoided, effective calibration of the PVT is realized, the monitoring precision is improved, and the method and the circuit are advantageous in that the structure is simple, the area is small, and static power consumption is avoided.

Description

technical field [0001] The invention relates to the field of chip design, in particular to a full MOS voltage and temperature monitoring method and circuit in the chip. Background technique [0002] In an integrated circuit, it is particularly important to monitor the power supply voltage and temperature of the chip. On the one hand, due to the limitation of the withstand voltage of the process, too high power supply voltage will reduce the working life of the chip, and even cause permanent damage to the chip device; on the other hand, too low power supply voltage may affect the function of the chip, resulting in erroneous operation of the system . In addition, due to the sensitivity of semiconductor devices to temperature, when the temperature exceeds a certain range, the normal operation of the chip may be affected. Therefore, it is necessary to monitor the temperature of the chip, and perform necessary temperature compensation on the chip as required, so as to ensure th...

AI Technical Summary

Problems solved by technology

[0008] In the Chinese patent application document with the publication number CN101751062A, the temperature drift of the ring oscillator is compensated by a low-noise reference voltage generation circuit and a linear regulator. However, the circuit structure is complex, and trimming resistors are used. The manufacturing process is complicated and the cost is high.

[0009] In the Chinese patent application document with the publication number CN103684354A, two kinds of inverters with positive and negative temperature coefficients are used to form a ring oscillator. Although the problem of temperature drift is solved, the dispersion caused by the process is not considered, and the practicability is poor.

[0010] From the above examples, it can be seen that the design realized in the all-digital process often lacks comprehensive compensation for PVT, resulting in poor practicability; while the design that considers PVT compensation mostly uses additional analog devices, resulting in inability to fully digital

Images