Full-MOS voltage and temperature monitoring method and circuit
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- 广州粒子微电子有限公司
- Publication Date
- 2019-12-06
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Abstract
Description
technical field
[0001] The invention relates to the field of chip design, in particular to a full MOS voltage and temperature monitoring method and circuit in the chip. Background technique
[0002] In an integrated circuit, it is particularly important to monitor the power supply voltage and temperature of the chip. On the one hand, due to the limitation of the withstand voltage of the process, too high power supply voltage will reduce the working life of the chip, and even cause permanent damage to the chip device; on the other hand, too low power supply voltage may affect the function of the chip, resulting in erroneous operation of the system . In addition, due to the sensitivity of semiconductor devices to temperature, when the temperature exceeds a certain range, the normal operation of the chip may be affected. Therefore, it is necessary to monitor the temperature of the chip, and perform necessary temperature compensation on the chip as required, so as to ensure th...