Preparation method of electronic grade hydrogen bromide

A hydrogen bromide, electronic-grade technology, applied in the field of preparation of electronic-grade hydrogen bromide, can solve problems such as strong corrosion, and achieve the effect of saving liquid nitrogen, reducing energy consumption and cooling consumption

Pending Publication Date: 2019-12-13
TIANJIN ZHONGKE TUOXIN TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Since hydrogen bromide is highly corrosive to equipment in the presence of

Method used

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  • Preparation method of electronic grade hydrogen bromide

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Experimental program
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Effect test

Embodiment 1

[0032] Bromine with a purity of 99.9% is fully vaporized by the preheater E101, and then enters the reactor R101 after being fully mixed with hydrogen with a purity of 99.999% in the mixer M101, wherein the molar ratio of bromine and hydrogen is 1:1, and the reactor R101 is filled with The supported Pt-Mo-W catalyst, bromine gas and hydrogen gas are catalytically combusted in the reactor to generate hydrogen bromide, the reaction temperature is 320°C, and the reaction pressure is 0.5MPa. The reaction product is extracted from the top of the reactor R101 and enters the preheater E101 and After heat exchange, the bromine raw material enters the reboiler E102 and exchanges heat with the material in the tower tank of the light removal tower T101. After the heat exchange, the reaction product is cooled to normal temperature by the cooler E106 and then enters the light removal tower T101. The operating pressure of the light removal tower T101 is 0.5MPa , the top gas phase is taken ou...

Embodiment 2

[0035] Bromine with a purity of 99.9% is fully vaporized by the preheater E101, and then enters the reactor R101 after being fully mixed with hydrogen with a purity of 99.999% in the mixer M101, wherein the molar ratio of bromine and hydrogen is 1:2, and the reactor R101 is filled with Supported Pt-Co-W catalyst, bromine and hydrogen react in the catalytic combustion reactor to generate hydrogen bromide, the reaction temperature is 400 ° C, the reaction pressure is 2 MPa, the reaction product is extracted from the top of the reactor R101 and enters the preheater E101 and bromine After heat exchange, the raw material enters T101 reboiler E102 to exchange heat with the material in the tower tank of light removal tower T101. The reaction product after heat exchange is cooled to normal temperature by cooler E106 and then enters light removal tower T101. The operating pressure of light removal tower T101 is 2MPa. The top gas phase is taken out and enters the reboiler E103 to exchang...

Embodiment 3

[0038]Bromine with a purity of 99.9% is fully vaporized by the preheater E101, and after being fully mixed with hydrogen with a purity of 99.999% in the mixer M101, it enters the reactor R101, wherein the molar ratio of bromine and hydrogen is 1:5, and the reactor R101 is filled with Supported Pt-Mo-Co catalyst, bromine gas and hydrogen gas are catalytically combusted in the reactor to generate hydrogen bromide, the reaction temperature is 360°C, and the reaction pressure is 5MPa. The reaction product is extracted from the top of the reactor R101 and enters the preheater E101 and bromine After heat exchange, the raw material enters the reboiler E102 to exchange heat with the material in the tower tank of the light removal tower T101. After the heat exchange, the reaction product is cooled to normal temperature by the cooler E106 and then enters the light removal tower T101. The operating pressure of the light removal tower T101 is 5MPa. The gaseous phase is recovered and enters...

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Abstract

The invention discloses a preparation method of electronic grade hydrogen bromide, and the method comprises the following steps: firstly, bromine is gasified by a preheater, and mixed with hydrogen toenter a reactor for catalytic combustion reaction to generate hydrogen bromide; reaction products are extracted from the top of the reactor and then enter the preheater to exchange heat with the bromine and then enter a reboiler to exchange heat with materials in the bottom of a light removal tower; and the heat-exchanged reaction products enter the light removal tower after being cooled by a cooler. The gas phase extracted from the top of the light removal tower enters the reboiler to exchange heat with the materials in the bottom of a heavy removal tower, and enters a condenser to be condensed and cooled, the liquid phase returns to the light removal tower to be extracted as light component impurities; crude hydrogen bromide extracted from the side line of the light removal tower entersthe heavy removal tower, and heavy impurities are extracted from the tower bottom; a 6N electronic grade hydrogen bromide product is extracted from the top of the heavy removal tower, and heavy components are extracted from the tower bottom. According to the invention, heat generated by the reaction and a double-effect rectification process are fully utilized, no external heat source is needed, and liquid nitrogen can be saved by more than 45 percent; the bromine and hydrogen are selected as reaction raw materials, the reaction product has less impurities and high bromine selectivity, and canbe 100% converted into hydrogen bromide.

Description

technical field [0001] The invention relates to the technical field of hydrogen bromide preparation, in particular to a method for preparing electronic-grade hydrogen bromide. Background technique [0002] Hydrogen bromide is used in the manufacture of various bromine compounds, and can also be used in medicine, dyes, spices and other industries. It is used in the manufacture of various inorganic bromides such as sodium bromide, potassium bromide, lithium bromide and calcium bromide, etc. Compounds such as methyl bromide, ethyl bromide, etc. It is used in medicine to synthesize sedatives and anesthetics. It is also a good solvent for some metal minerals and is used for the extraction of high-purity metals. [0003] The plasma etching technology using hydrogen bromide as the etching gas can achieve precise etching precision by controlling the temperature of the etched substance. Therefore, high-purity and high-purity hydrogen bromide is mostly used in the etching of semico...

Claims

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Application Information

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IPC IPC(8): C01B7/09
CPCC01B7/093C01P2006/80
Inventor 曾宪友
Owner TIANJIN ZHONGKE TUOXIN TECH CO LTD
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