MPCVD (microwave plasma chemical vapor deposition) device

A technology of chemical vapor deposition and microwave plasma, which is applied in the direction of chemical reactive gas, gaseous chemical plating, chemical instruments and methods, etc., can solve the problem of uneven gas distribution on the surface of the sample table, poor focusing ability, and dielectric window etching and other problems to achieve the effect of solving the problem of plasma etching
CN110565160AActive Publication Date: 2019-12-13广东众元半导体科技有限公司
16 Cites 3 Cited by

Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
广东众元半导体科技有限公司
Publication Date
2019-12-13

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention discloses an MPCVD (microwave plasma chemical vapor deposition) device. The MPCVD device comprises an upper cavity, a lower cavity, a center shaft, a sample table, sealed insulating parts, insulated supporting parts, a gas inlet and a gas outlet, wherein the center shaft is arranged above a reaction cavity and forms a coaxial waveguide allowing microwave feed-in with the reaction cavity; the sample table arranged below the reaction cavity is used for substrate placement, and the center shaft facing one side of the sample table is provided with a sunken structure surface; the sealed insulating parts and the insulated supporting parts are arranged in the coaxial waveguide, meanwhile, the lower end surface of the center shaft is lower than the lower end surfaces of the sealed insulating parts and the lower end surfaces of the insulated supporting parts, and the sealed insulating parts and the insulated supporting parts are away from plasma, thereby avoiding being etched by the plasma; and the gas inlet and the gas outlet adopt a horizontal gas inlet and outlet mode, and high-quality and high-uniformity epitaxial growth on the substrate is facilitated. The problem about high-power microwave feed-in in the reaction cavity is solved, stable and reliable vacuum sealing is realized, and uniformity of reaction gas is guaranteed.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention belongs to the technical field of microwave plasma chemical vapor deposition, and in particular provides a high-power microwave plasma chemical vapor deposition device that can be applied to diamond film preparation. Background technique

[0002] Diamond film has many advantages such as high hardness, good thermal conductivity, small thermal expansion coefficient, high light transmittance, excellent electrical properties, good dielectric properties, etc. Devices and other fields have broad application prospects. At present, the most commonly used methods for preparing diamond films are hot wire chemical vapor deposition (HFCVD), direct current arc plasma jet chemical vapor deposition (DC arc plasma jet CVD) and microwave plasma chemical vapor deposition (MPCVD). kind. Among the three methods, the MPCVD method is characterized by good controllability of the diamond film deposition process and no pollution of the discharge electrode. It i...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More