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Conductive plug, method for forming same, and integrated circuit

A technology of conductive plugs and integrated circuits, applied in circuits, electrical components, electrical solid devices, etc., can solve problems such as corrosion, and achieve the effects of good corrosion resistance, good device quality, and good electrical connection performance

Active Publication Date: 2019-12-13
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved in the present invention is that after the conductive plug is formed, the metal filled in the conductive plug, such as cobalt, is directly exposed to the subsequent process gas (such as fluorine-containing gas) to cause corrosion.

Method used

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  • Conductive plug, method for forming same, and integrated circuit
  • Conductive plug, method for forming same, and integrated circuit
  • Conductive plug, method for forming same, and integrated circuit

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Embodiment Construction

[0032] The conductive plug, its forming method, and integrated circuit of the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. The advantages and features of the present invention will become clearer from the following description. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0033] The terms "first", "second", etc. in the description and claims are used to distinguish between similar elements and not necessarily to describe a specific order or chronological order. It is to be understood that the terms so used are interchangeable under appropriate circumstances, for example, to enable the embodiments of the invention described herein to be operated in other sequences than described or illustrated herein. Similarly, if a me...

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Abstract

The present invention relates to a conductive plug, a method for forming the same, and an integrated circuit. The method for forming the conductive plug comprises: firstly, forming a first contact hole in a first insulating layer on a semiconductor substrate and fully filling the first contact hole with a first conductive layer; etching back the first conductive layer in order that the first conductive layer fills only a part of the first contact hole; fully filling the first contact hole with a protective layer, wherein the protective layer is configured to protect the first conductive layerunderneath to prevent a subsequent process gas from corroding the first conductive layer, and can also form good electrical contact between the first conductive layer and a upper conductive layer or metal layer. The present invention further provides a conductive plug formed by using the method and an integrated circuit including the conductive plug.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing technology, in particular to a conductive plug, a forming method thereof, and an integrated circuit. Background technique [0002] With the rapid development of VLSI, the manufacturing process of integrated circuits has become more and more complex and refined. Multilayer wiring technology has become an important method to increase the integration density by utilizing the vertical space of the chip. Multilayer wiring technology is to design two or more metal layers on the semiconductor substrate, and form conductive plugs surrounded by insulating layers between different metal layers, and the conductive plugs are filled with metals (such as tungsten, copper, etc. ) so as to realize the electrical connection between different metal layers. [0003] In addition, as the integrated circuit manufacturing process becomes more and more complex and refined, the process node is gradually re...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768H01L23/538
CPCH01L21/76847H01L23/5386
Inventor 蒋莉
Owner SEMICON MFG INT (SHANGHAI) CORP