Sapphire polishing agent and preparation method thereof

A polishing agent and sapphire technology, which is applied to polishing compositions containing abrasives and other directions, can solve the problems of unstable polishing surface quality and low polishing rate of sapphire polishing liquid, and achieve the effects of good polishing effect and simple preparation method.

Inactive Publication Date: 2019-12-17
江苏吉星新材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, the sapphire polishing liquid produced by the prior art has a low polishing rate

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0018] Example 1

[0019] A sapphire polishing agent, comprising the following parts by mass: 80 parts of silicon, 34 parts of α-alumina, 22 parts of aluminum oxide, 22 parts of titanium dioxide, 16 parts of zirconia, 14 parts of disodium hydrogen phosphate, and chitosan 14 parts, 12 parts of ferric chloride, 8 parts of titanium diboride, 5 parts of carbon black, 3 parts of dispersant, and 120 parts of deionized water.

[0020] Wherein, the dispersant is an ethylene-acrylic acid copolymer.

[0021] A preparation method of sapphire polishing agent includes the following steps:

[0022] (1) Weigh the raw materials and reserve them;

[0023] (2) Ball milling silicon, α-alumina, aluminum oxide, titanium dioxide, zirconium oxide, ferric chloride, titanium diboride, and carbon black respectively for 1 hour and mixing uniformly to obtain a mixture;

[0024] (3) Dissolve the mixture in deionized water and stir for 1 hour at a temperature of 150°C at a speed of 600r / min; add disodium hydrogen ph...

Example Embodiment

[0025] Example 2

[0026] A sapphire polishing agent, comprising the following parts by mass: 120 parts of silicon, 44 parts of α-alumina, 35 parts of aluminum oxide, 34 parts of titanium dioxide, 21 parts of zirconia, 18 parts of disodium hydrogen phosphate, and chitosan 19 parts, 16 parts of ferric chloride, 14 parts of titanium diboride, 9 parts of carbon black, 5 parts of dispersant, and 150 parts of deionized water.

[0027] Wherein, the dispersant is ethylene-vinyl acetate copolymer.

[0028] A preparation method of sapphire polishing agent includes the following steps:

[0029] (1) Weigh the raw materials and reserve them;

[0030] (2) Ball milling silicon, α-alumina, aluminum oxide, titanium dioxide, zirconium oxide, ferric chloride, titanium diboride, and carbon black respectively for 2 hours and mixing uniformly to obtain a mixture;

[0031] (3) Dissolve the mixture in deionized water and stir for 2 hours at a temperature of 180°C at 1000r / min; add disodium hydrogen phosphate,...

Example Embodiment

[0032] Example 3

[0033] A sapphire polishing agent, comprising the following parts by mass: 110 parts of silicon, 42 parts of α-alumina, 30 parts of aluminum oxide, 29 parts of titanium dioxide, 19 parts of zirconia, 16 parts of disodium hydrogen phosphate, and chitosan 16 parts, 15 parts of ferric chloride, 12 parts of titanium diboride, 8 parts of carbon black, 4 parts of dispersant, and 130 parts of deionized water.

[0034] Wherein, the dispersant is a low molecular ionomer.

[0035] A preparation method of sapphire polishing agent includes the following steps:

[0036] (1) Weigh the raw materials and reserve them;

[0037] (2) Ball milling silicon, α-alumina, aluminum oxide, titanium dioxide, zirconium oxide, ferric chloride, titanium diboride and carbon black respectively for 1.5 hours and mixing uniformly to obtain a mixture;

[0038] (3) Dissolve the mixture in deionized water, stir at 700r / min for 1.5 hours at a temperature of 170°C; add disodium hydrogen phosphate, chitosan ...

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PUM

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Abstract

The invention belongs to the technical field of gem processing, and particularly relates to a sapphire polishing agent and a preparation method thereof. The sapphire polishing agent comprises the following components in parts by mass: 80-120 parts of silicon, 34-44 parts of alpha-aluminum oxide, 22-35 parts of aluminum oxide, 22-34 parts of titanium dioxide, 16-21 parts of zirconium oxide, 14-18 parts of disodium hydrogen phosphate, 14-19 parts of chitosan, 12-16 parts of ferric trichloride, 8-14 parts of titanium diboride, 5-9 parts of carbon black, 3-5 parts of a dispersing agent and 120-150parts of deionized water. The sapphire polishing agent prepared by the invention has better polishing effect and higher polishing efficiency; and the preparation method is simple in process and suitable for industrial production.

Description

technical field [0001] The invention belongs to the technical field of gem processing, and in particular relates to a sapphire polishing agent and a preparation method thereof. Background technique [0002] Sapphire polishing liquid is a kind of high-purity low-metal ion polishing product produced by special process based on high-purity silicon powder. Sapphire polishing fluid is mainly used for polishing sapphire substrates. It can also be widely used in nanoscale high planarization polishing of various materials, such as: polishing of silicon wafers, compound crystals, precision optical devices, gemstones, etc. [0003] However, the sapphire polishing liquid produced by the prior art has a low polishing rate and unstable polishing surface quality, which cannot fully meet the requirements of the market. Contents of the invention [0004] Aiming at the deficiencies of the prior art, the present invention provides a sapphire polishing agent and a preparation method thereo...

Claims

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Application Information

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IPC IPC(8): C09G1/02
CPCC09G1/02
Inventor 秦俊宋述远蔡金荣
Owner 江苏吉星新材料有限公司
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