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Ink composition for forming an organic layer of a semiconductor

A technology of ink composition and organic semiconductor layer, applied in semiconductor devices, organic semiconductor devices, semiconductor/solid-state device manufacturing, etc. Eliminate issues such as transfer and reduced conductivity for cost-effective and reproducible results

Active Publication Date: 2019-12-24
NOVALED GMBH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0017] Conventional inkjet process using various additives, resulting in lower dielectric coefficient, charge transfer and electrical conductivity due to degradation of the components of the ink composition and due to phase separation
Specifically, impurities and concentration changes left in the ink composition after manufacture cause variations in dielectric coefficient, charge transfer, lifetime, and conductivity of electronic devices such as OLEDs, organic thin-film transistors (OTFTs), or solar cells. decline

Method used

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  • Ink composition for forming an organic layer of a semiconductor
  • Ink composition for forming an organic layer of a semiconductor
  • Ink composition for forming an organic layer of a semiconductor

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Embodiment Construction

[0044] One embodiment of the ink composition for forming an organic semiconductor layer comprises:

[0045] - at least one p-type dopant comprising an electron-withdrawing group;

[0046] - at least one organic charge transport material, wherein said organic charge transport material is different from said p-type dopant;

[0047] - at least one first auxiliary compound, wherein said first auxiliary compound is an aromatic nitrile compound, wherein said aromatic nitrile compound has about ≥ 1 to about ≤ 3 nitrile groups and a melting point of about < 100° C., wherein said second an auxiliary compound different from the p-type dopant; and

[0048] Wherein the electron-withdrawing group is fluorine, chlorine, bromine and / or nitrile.

[0049] According to another embodiment, the ink composition for forming an organic semiconductor layer comprises:

[0050] - at least one p-type dopant comprising an electron-withdrawing group;

[0051] - at least one first auxiliary compound, w...

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Abstract

The present invention is directed to an ink composition for forming an organic semiconductor layer, wherein the ink composition comprises: at least one p-type dopant comprising electron withdrawing groups; at least one first auxiliary compound, wherein the first auxiliary compound is an aromatic nitrile compound, wherein the aromatic nitrile compound has about >= 1 to about <= 3 nitrile groups anda melting point of about < 100 DEG C, and the first auxiliary compound is different from the p-type dopant; and the electron withdrawing groups are fluorine, chlorine, bromine and / or nitrile.

Description

technical field [0001] The present invention relates to an ink composition for forming an organic layer of a semiconductor, an electronic device such as an OLED or a solar cell including the semiconductor layer, and a method of manufacturing the organic semiconductor layer. Background technique [0002] Optoelectronic devices have been successfully commercialized, and their large-scale and cost-effective fabrication has been intensively studied. Typical examples of these optoelectronic devices include organic electroluminescence devices or organic light-emitting diodes (OLEDs), which utilize the electron-hole The coupling between light-emitting devices produces the phenomenon of spontaneous luminescence. These OLEDs have a simple structure, are obtained through a simple process, and achieve high image quality and a wide viewing angle. In addition, they fully realize video images and high color purity, and are driven with low power consumption at low voltage, making them su...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/54
CPCY02E10/549H10K71/15H10K71/135H10K85/115H10K85/151H10K50/17H10K85/60H10K85/341C09D11/38C09D11/52H10K85/611H10K50/11C09D11/102H10K39/10H10K59/122H10K59/173H10K85/615H10K50/155H10K2101/30H10K2101/40H10K2102/361
Inventor 凯·莱德雷尔斯特芬·伦格杰罗姆·加尼尔安克·泰希勒
Owner NOVALED GMBH
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