Forming method of contact hole structure and the contact hole structure
A technology of contact hole and sputtering process, which is applied in the direction of semiconductor/solid-state device parts, semiconductor devices, electrical components, etc., can solve the problems of small process window and low yield rate, so as to solve the problem of low yield rate and improve yield rate , the effect of expanding the opening size
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Embodiment 1
[0042] refer to figure 1 , which shows a flowchart of a method for forming a contact hole structure provided by an exemplary embodiment of the present application, the method includes:
[0043] Step 101, forming grooves on the dielectric layer.
[0044] refer to figure 2 , which shows a groove 201 formed on a dielectric layer 210, the dielectric layer 210 may be an interlayer dielectric layer of a semiconductor device, or a dielectric layer on a substrate of a semiconductor device, and the groove 201 runs through the dielectric layer 210 , which can be used to fill conductive material to form a via structure to connect the upper and lower layers of the dielectric layer 210 to the region where the upper and lower layers need to be connected.
[0045] Step 102 , sequentially forming a diffusion barrier layer and a wetting layer on the bottom and side walls of the groove, and forming a protrusion structure at the opening of the groove during the formation of the wetting layer....
Embodiment 2
[0057] Referring to Example 1, the difference between Example 2 and Example 1 is that in step 103 "deposit copper seed crystals on the surfaces of the diffusion barrier layer and the wetting layer by the first sputtering process and the second sputtering process": the first sputtering The vertical angle of the shot process is greater than 45 degrees.
[0058] Optionally, in this embodiment, the bias energy of the first sputtering process is greater than 500 watts; optionally, the vertical angle of the second sputtering process is less than 45 degrees; optionally, the bias voltage of the second sputtering process Power less than 500 watts.
Embodiment 3
[0060] With reference to Example 1 and Example 2, the difference between Example 3 and the above-mentioned examples is that step 105 "removing the remaining diffusion barrier layer and copper layer outside the groove" includes but is not limited to: chemical mechanical polishing (Chemical Mechanical Polishing) Polishing (CMP) process removes the remaining diffusion barrier layer 220 and copper layer 250 outside the trench 201 .
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Abstract
Description
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Application Information
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