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Plasma etching device

A plasma and etching device technology, applied in discharge tubes, electrical components, circuits, etc., can solve problems such as plasma instability, achieve uniform distribution, and improve stability

Inactive Publication Date: 2020-01-24
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present application provides a plasma etching device, which can solve the problem of unstable plasma generated in the reaction chamber when the voltage changes in the related art

Method used

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] see figure 1 and figure 2 , shows the plasma etching device of this embodiment, the plasma etching device includes a reaction chamber 100, and the reaction chamber 100 is provided with: an electrostatic chuck 200 for absorbing the wafer 500 to be processed, an electric field generator and a plasma beam Release port 300; the electric field generator can generate electric field E, and the plasma beam release port 300 can form a plasma beam for bombarding the surface of the wafer 500 to be processed; the electric field generator can generate electric field E; the reaction chamber 100 chamber also passes through The magnetic field B extends along the radial direction of the plasma beam; the electric field E extends along the axial direction of the plasma beam, and the plasma beam release port 300 is arranged in the plasma.

[0034] Such as figure 1 As shown, the electric field E in the vertical direction is formed in the reaction chamber 100, and the magnetic field B pas...

Embodiment 2

[0037] see figure 2 In this embodiment, on the basis of the first embodiment, the electric field generator of the first embodiment includes a first electrode 610 and a second electrode 620 placed opposite each other, and the first electrode 610 and the second electrode 620 are connected to an oscillating radio frequency source.

[0038] For this embodiment, the first electrode 610 and the second electrode 620 can be as figure 2 As shown, a flat plate electrode is used, and the first electrode 610 and the second electrode 620 are arranged in parallel; in addition, the first electrode 610 and the second electrode 620 can also be arc-shaped electrode plates, and the arc of the first electrode 610 and the second electrode 620 Relatively concave.

[0039] In this embodiment, since the first electrode 610 is connected to an oscillating radio frequency source, an oscillating electric field E is generated between the first electrode 610 and the second electrode 620, and the field s...

Embodiment 3

[0041] see Figure 4 and Figure 5 , on the basis of Embodiment 1 or Embodiment 2, the magnetic field B rotates in a plane perpendicular to the electric field E. The specific scheme that the magnetic field B rotates in the plane perpendicular to the electric field E is optional: the cylindrical magnetic field generator 700 is rotatably sleeved outside the reaction chamber 100; the magnetic field generator 700 is a permanent magnet, and the magnetic field generator 700 forms a relative The anode area S and the cathode area N, a magnetic field B is formed between the anode area S and the cathode area N. Of course, in addition to this method, the magnetic field B can also be generated by, for example, an alternating electric field, and is not limited to being generated by the above-mentioned permanent magnet.

[0042]The magnetic flux of the magnetic field B in this embodiment is 50-200G (Gauss), and the rotation speed of the magnetic field B in a plane perpendicular to the ele...

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PUM

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Abstract

The invention relates to the technical field of semiconductor processing equipment, in particular to a plasma etching device, and provides the plasma etching device which comprises a reaction chamber.The reaction chamber is internally provided with an electrostatic chuck which is used for adsorbing a wafer to be treated; a plasma beam releasing port which is used for forming a plasma beam bombarding the wafer to be processed; and an electric field generator which is used for generating an electric field. When the plasma etching device works, a magnetic field is formed in the reaction chamber,and the magnetic field extends along the radial direction of the plasma beam; and the electric field extends along the axial direction of the plasma beam. The electric field axially penetrates through the plasma beam and the magnetic field radially penetrates through the plasma beam so that a circumferential plasma flow is formed in the plasma beam, the plasma in the plasma beam is uniformly distributed and the stability of the plasma beam is improved.

Description

technical field [0001] The present application relates to the technical field of semiconductor processing equipment, in particular to a plasma etching device. Background technique [0002] With the improvement of integrated circuit integration and the reduction of element line width, plasma etching process has been widely used. [0003] In the related art, the plasma etching process is to arrange electrodes in the reaction chamber of the plasma etching device, provide etching gas as the reaction gas to the reaction chamber, and form a reaction in the reaction chamber by applying radio frequency on the electrodes. The gas plasma beam etches the surface of the wafer by the plasma beam. [0004] However, once the voltage during the etching process changes, it will cause changes in the radio frequency coupling at the local position of the plasma etching device, resulting in unstable plasma and uneven ion density. If the electrode plate sheath voltage drop is too high, high ion...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/147H01J37/30H01J37/305
CPCH01J37/3053H01J37/3056H01J37/3007H01J37/147
Inventor 赵博超施洋郑江楠
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP