Method for increasing effective area of active region

Abstract

The invention provides a method for increasing the effective area of an active region. The method is characterized in that photoresist removal and cleaning of a single wafer are performed after the active region is etched and formed; the HF solution is used for cleaning for 90s, the SPM cleaning agent is used for cleaning for 60s, the SC1 cleaning agent is used for cleaning for 30s, and the SCN cleaning agent is used for cleaning for 30s; the single wafer is cleaned after the active region silicon nitride is etched back; O3 is used for cleaning for 30s; the SC1 cleaning agent is used for cleaning for 30s, and the SCN cleaning agent is used for cleaning for 30s; the SC2 cleaning agent is used for cleaning for 15s; the single wafer is cleaned before an STI region thin oxide layer is formed,O3 is used for cleaning for 30 seconds, and the HF solution is used for cleaning for 6 minutes; the SC1 cleaning agent is used for cleaning for 30s, and the SCN cleaning agent is used for cleaning for30s; SC2 is used for cleaning for 15s. The method is advantaged in that a batch operation mode is changed into an operation mode of the single wafer, the chemical proportion of the cleaning solutionis improved, the cleaning time of the wafer is shortened, on the basis that the active region is cleaned, the effective area of the active region is reserved, the channel width of an MOS device is increased, uniformity of the SRAM is improved, performance of the SRAM is improved, and performance of various MOS devices is greatly improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for increasing the effective area of ​​an active region. Background technique [0002] An SRAM device is a working unit formed by combining several MOS devices. If the uniformity of each device is not high, it will affect the performance of the entire SRAM device. With the development of VLSI technology, the size of MOSFET devices is constantly decreasing, which puts forward higher requirements for the photolithography process. With the reduction of MOS devices, the slight difference in the size of each device will be magnified, which will affect the performance of SRAM. On the basis of meeting the 28nm process node, by improving other process steps and increasing the width of the active region, the channel width of the device can be effectively increased, which in turn can improve the local variation of the SRAM device and improve the working performance of t...

AI Technical Summary

Problems solved by technology

[0004] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a method for increasing the effective area of ​​the active region, which is used to solve the problem of immersing the wafer in the chemical solution for a long time during batch cleaning in the prior art, thus causing Excessive cleaning reduces the effective area of ​​the active area and reduces the working performance of SRAM

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