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A single atomic layer tungsten disulfide two-dimensional material and its preparation method and application of reverse physical vapor deposition

A physical vapor deposition, two-dimensional material technology, applied in the field of preparation of tungsten disulfide two-dimensional material and its inverse physical vapor deposition, can solve the problems of low air flow rate, easy to be affected by the outside world, etc., and achieve high crystallinity and good pressure. electrical properties, reducing the effect of depositing multiple layers

Active Publication Date: 2021-01-19
SOUTH CHINA NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The previous physical vapor deposition technology, due to the low flow rate of the air flow during the heat preservation, is easily affected by the outside world, what kind of consequences or specific adverse effects will be produced?

Method used

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  • A single atomic layer tungsten disulfide two-dimensional material and its preparation method and application of reverse physical vapor deposition
  • A single atomic layer tungsten disulfide two-dimensional material and its preparation method and application of reverse physical vapor deposition

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Experimental program
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Effect test

Embodiment 1

[0031] 1. Preparation: SiO 2 / Si substrate was ultrasonically cleaned with acetone, deionized water and isopropanol; 50 mg of WS was loaded in a single temperature zone tube furnace 2 The powder is placed in the middle of the heating zone, and the SiO 2 The / Si substrate is placed at the furnace mouth of the tube furnace. At the beginning, the gas flow direction is from the substrate to the WS 2 powder and then start to heat up to stop the WS 2 The growth begins before reaching the growth temperature; when the temperature rises to 1100°C, change the direction of the inert gas so that the direction of the gas flow changes from WS to 2 powder to the substrate, then adjust the air flow rate to 100ml / min, and keep warm for 7 minutes in this temperature range to make WS2 Start to grow on the substrate; then start to cool down to 1000°C, and adjust the air flow rate to 80ml / min to reduce WS 2 growth rate; when the temperature is lowered to 900°C, the gas flow rate is adjusted to ...

Embodiment 2

[0034] 1. Preparation: SiO 2 / Si substrate was ultrasonically cleaned with acetone, deionized water and isopropanol; 20 mg of WS was loaded in a small boat in a single temperature zone tube furnace 2 The powder is placed in the middle of the heating zone, and then 0.5cm 2 SiO 2 The / Si substrate is placed at the furnace mouth of the tube furnace. At the beginning, the gas flow direction is from the substrate to the WS 2 powder and then start to heat up to stop the WS 2 The growth starts before reaching the growth temperature; when the temperature rises to 1000°C, change the direction of the inert gas so that the gas flow direction changes from WS to 2 powder to the substrate, then adjust the air flow rate to 50ml / min, and keep warm for 8 minutes in this temperature range, so that the WS 2 Start to grow on the substrate; then start to cool down to 900°C, and adjust the air flow rate to 50ml / min to reduce WS 2 growth rate; when the temperature is lowered to 800°C, adjust th...

Embodiment 3

[0037] 1. Preparation: SiO 2 / Si substrate was ultrasonically cleaned with acetone, deionized water and isopropanol; 60 mg of WS was loaded in a single temperature zone tube furnace 2 The powder is placed in the middle of the heating zone, and then 0.5cm 2 SiO 2 The / Si substrate is placed at the furnace mouth of the tube furnace. At the beginning, the gas flow direction is from the substrate to the WS 2 powder and then start to heat up to stop the WS 2 The growth begins before reaching the growth temperature; when the temperature rises to 1200°C, change the direction of the inert gas so that the direction of the gas flow changes from WS to 2 powder to the substrate, then adjust the air flow rate to 30ml / min, and keep warm for 10 minutes in this temperature range, so that the WS 2 Start to grow on the substrate; then start to cool down to 950°C, and adjust the air flow rate to 50ml / min to reduce WS 2 growth rate; when the temperature is lowered to 800°C, the gas flow rate...

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Abstract

The invention belongs to the technical field of piezoelectrons, and discloses a WS2 two-dimensional material and a preparation method and application thereof. The WS2 two-dimensional material is prepared by the following steps: placing WS2 powder and a cleaned SiO2 / Si substrate at the center and the edge of a heating area respectively; introducing an inert gas with the direction of the gas flow isfrom the substrate to the WS2 powder at an introduction speed of 55-60 ml / min for exhausting air, and changing the direction of inert gas when the temperature reaches 1080-1090 DEG C; when the temperature reaches 1000-1200 DEG C, the flow rate being 30-100 ml / min; cooling to 900-1000 deg c, the flow rate being 20-80 ml / min, cooling to 800-900 deg c, the flow rate being 5-50 ml / min, and cooling toroom temperature to prepare the WS2 two-dimensional material on the surface of SiO2 layer. A piezoelectric device prepared by the WS2 has excellent piezoelectric performance and stable dynamic piezoelectric signals, and the piezoelectric output current reaches 100-800pA.

Description

technical field [0001] The invention belongs to the field of two-dimensional material growth and piezoelectric technology, and more specifically relates to a monoatomic layer of tungsten disulfide (WS 2 ) two-dimensional materials and their reverse physical vapor deposition (PVD) preparation methods and applications. Background technique [0002] Atomic-thick two-dimensional transition metal chalcogenides (TMDCs) have aroused intense interest due to their unique electrical and optical properties. Properties can be complementary to those of graphene. Unlike multilayer structures, single-layer semiconducting TMDCs have relatively large direct bandgap, which provides opportunities for their applications in transistors, integrated circuits, photodetectors, electroluminescence devices, electronics, and spintronics devices. possibility. [0003] As an important member of two-dimensional TMDCs, WS 2 It has excellent physical properties and a wide range of device applications. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/54C23C14/06C01G41/00
CPCC01G41/00C01P2004/01C01P2004/61C23C14/0623C23C14/54
Inventor 李京波徐志军李翎霍能杰赵艳魏钟鸣陈洪宇
Owner SOUTH CHINA NORMAL UNIVERSITY