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Tubular PECVD equipment and method for preparing rear passivation film

A back passivation, tube-type technology, applied in the direction of final product manufacturing, gaseous chemical plating, sustainable manufacturing/processing, etc., can solve the problem of reducing the total time of a single process and the unsatisfactory passivation effect of the back passivation layer , Affecting production capacity improvement and other issues, to achieve the effect of reducing power consumption and production costs, simplifying the gas system, and improving production efficiency and production capacity

Active Publication Date: 2021-11-26
HUNAN RED SUN PHOTOELECTRICITY SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, in the actual process, the heating time from low temperature to high temperature is long, which is not conducive to reducing the total time of a single process, which in turn affects the increase in actual production capacity
In the preparation process of the existing back passivation layer, there is still the problem that the passivation effect of the back passivation layer is not ideal

Method used

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  • Tubular PECVD equipment and method for preparing rear passivation film
  • Tubular PECVD equipment and method for preparing rear passivation film
  • Tubular PECVD equipment and method for preparing rear passivation film

Examples

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Comparison scheme
Effect test

Embodiment 1

[0034] A tubular PECVD device for preparing a backside passivation film, including a reaction chamber for depositing an AlOx film and four reaction chambers for depositing a SiON film / SiNx film, wherein the gas inlet for the reaction chamber for depositing an AlOx film N 2 O intake pipe, NH 3 Intake manifold, TMA / Ar intake manifold and N 2 Intake pipe; the suction port of the reaction chamber for depositing AlOx film is connected with a vacuum pump; a dust removal device is provided between the reaction chamber for depositing AlOx film and the vacuum pump; the air inlet of the reaction chamber for depositing SiON film / SiNx film Connectivity has N 2 O intake pipe, NH 3 Intake pipe, N 2 Intake pipe and SiH 4 Intake pipe.

[0035] In this embodiment, by setting the reaction chamber for depositing AlOx film and the reaction chamber for depositing SiON film / SiNx film, the deposition process of AlOx film and SiON film / SiNx film is carried out in at least two different reaction...

Embodiment 2

[0043] A method for preparing a back passivation film, adopting the tubular PECVD equipment in embodiment 1 to prepare a back passivation film, comprising the following steps:

[0044] S1: Place the graphite boat carrier filled with slides in the 1# reaction chamber (the reaction chamber used to deposit the AlOx film), vacuumize, and keep the temperature at 300°C.

[0045] S2: After the temperature is stabilized, the process gas (N 2 O, TMA, Ar gas) and keep the pressure in the 1# reaction chamber (reaction chamber for depositing AlOx film) constant at 210Pa, turn on the intermediate frequency power supply, the power supply is 7500W, the temperature is constant at 300°C, N 2 The O flow rate is 3500 sccm, the TMA flow rate is 1.3 mg / min, and the Ar flow rate is 2500 sccm. The AlOx film is deposited on the back of the silicon wafer for 150 s. The AlOx film has a thickness of 18 nm and a refractive index of 1.62.

[0046] S3: evacuate the 1# reaction chamber (reaction chamber fo...

Embodiment 3

[0063] A method for preparing a back passivation film, adopting the tubular PECVD equipment in embodiment 1 to prepare a back passivation film, comprising the following steps:

[0064]S1: Place the graphite boat carrier filled with slides in the 1# reaction chamber (the reaction chamber used to deposit the AlOx film), vacuumize, and keep the temperature at 300°C.

[0065] S2: After the temperature is stabilized, the process gas (N 2 O, TMA, Ar gas) and keep the pressure in the 1# reaction chamber (reaction chamber for depositing AlOx film) constant at 210Pa, turn on the intermediate frequency power supply, the power supply is 7500W, the temperature is constant at 300°C, N 2 The O flow rate is 3500 sccm, the TMA flow rate is 1.3 mg / min, and the Ar flow rate is 2500 sccm. The AlOx film is deposited on the back of the silicon wafer for 150 s. The AlOx film has a thickness of 18 nm and a refractive index of 1.62.

[0066] S3: evacuate the 1# reaction chamber (reaction chamber for...

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Abstract

The invention discloses a tubular PECVD equipment and method for preparing a back passivation film. The equipment includes at least one reaction chamber for depositing an AlOx film, and the gas inlet of the chamber is connected with a N 2 O intake pipe, NH 3 Intake manifold, TMA / Ar intake manifold and N 2 Intake pipe, and the suction port of this chamber is communicated with vacuum pump, is provided with dedusting device between the two simultaneously; The equipment also includes at least one reaction chamber for depositing SiON film / SiNx film, and the gas inlet of this chamber is communicated with N 2 O intake pipe, NH 3 Intake pipe, N 2 Intake pipe and SiH 4 Intake pipe. The rear passivation film was prepared by using the above tubular PECVD equipment. The tubular PECVD equipment of the present invention has the advantages of reasonable matching of reaction chambers, fewer dust removal devices, simple gas path system, easy maintenance, and low manufacturing cost, and can significantly improve the passivation effect of the passivation film when used to prepare the back passivation film. It has high use value and good application prospect.

Description

technical field [0001] The invention belongs to the field of PERC battery preparation, and relates to a tubular PECVD equipment and method for preparing a back passivation film. Background technique [0002] PERC cells are the mainstream products in the photovoltaic industry at this stage. Improving the output capacity of finished products per unit time of the production line and the photoelectric conversion efficiency of finished solar cells are two important directions for industrial production. The production capacity of the whole line and the improvement of the efficiency of finished solar cells require not only further optimization of the coordination between the processes, but also the need for each process to try its best to optimize and improve the production capacity and process effect of the process. The back passivation film is one of the biggest differences between PERC cells and traditional solar cells. The back passivation film refers to the back laminated pass...

Claims

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Application Information

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IPC IPC(8): C23C16/50C23C16/40C23C16/34C23C16/30C23C16/56C23C16/54H01L31/0216H01L31/18
CPCC23C16/308C23C16/345C23C16/403C23C16/50C23C16/54C23C16/56H01L31/02167H01L31/1868Y02P70/50
Inventor 郭艳李明吴得轶赵增超
Owner HUNAN RED SUN PHOTOELECTRICITY SCI & TECH
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