Plasma processing apparatus and plasma processing method
A processing device and plasma technology, used in the manufacture of discharge tubes, electrical components, semiconductor/solid-state devices, etc., can solve the problems of wafer temperature rise, affecting processing size, etc., and achieve the effect of suppressing the impact and improving the ignitability of plasma
Active Publication Date: 2020-02-04
HITACHI HIGH-TECH CORP
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Problems solved by technology
[0007]
However, in the related prior art, since the wafer is continuously irradiated with ultraviolet rays, the temperature of the wafer rises, which may affect the processing size.
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[0048] A plasma processing apparatus according to an embodiment of the present invention will be described with reference to the drawings. figure 1 It is a schematic cross-sectional view of a microwave ECR (Electron Cyclotron Resonance, Electron Cyclotron Resonance) plasma processing apparatus using microwaves and a magnetic field in a plasma generation unit. In particular, in a plasma processing apparatus, when process conditions such as low gas pressure, low microwave power, and low duty ratio are used, plasma ignition cannot be properly performed at the start of the process, which has become an important technical issue. According to the present embodiment, the plasma ignitability can be improved even under relevant process conditions.
[0049] The microwave ECR plasma processing apparatus 100 is equipped with: a processing chamber 114 capable of evacuating the interior; a sample stage 113 on which a wafer 300 is disposed (also referred to as a sample); Provide mouth 117; ...
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The present invention provides a plasma processing device and a plasma processing method, which can improve the plasma ignitability even when the desired process conditions are not changed, and suppress the influence on the size of the processed object. The plasma processing device (100) includes: a processing chamber (114); a magnetron (105) that generates microwaves and projects them into the processing chamber (114); an electrode which is disposed in the processing chamber (114) and used for placing a wafer (300); an electrostatic adsorption power source (112) generating a potential for electrostatically adsorbing the electrode to the wafer (300); a process gas supply source (118) that supplies a process gas to the processing chamber (114); and A plasma ignition booster. The plasma ignition promoting device is an ultraviolet light source (102, 115) for irradiating pulsed ultraviolet rays into a processing chamber (114).
Description
technical field [0001] The present invention relates to a plasma processing device and a plasma processing method. Background technique [0002] In recent years, design rules in manufacturing processes such as semiconductor devices have become increasingly strict, and higher dimensional accuracy has been demanded for manufactured products. For example, in etching performed in low-temperature gas plasma, it is required to lower the plasma density in order to improve the uniformity of etching. In order to reduce the plasma density, there are methods such as reducing the gas pressure, reducing the microwave power, etc., but there is a possibility that plasma ignition may be difficult regardless of the method. [0003] On the other hand, Patent Document 1 discloses a semiconductor manufacturing apparatus that simultaneously supplies ultraviolet rays together with microwaves to a processing chamber. In related semiconductor manufacturing equipment, the supplied ultraviolet rays...
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IPC IPC(8): H01J37/32H01L21/3065
CPCH01J37/32431H01J37/32798H01L21/3065H01J37/32082H01J37/32715H01J37/32266H01J2237/334H01J37/226H01J2237/3343H01L21/67069H01L21/02315H01L21/0234H01L21/76862H01L21/02348H01L21/32136H01L21/76826
Inventor 徐浩内田丈滋中元茂福地功祐井上智己
Owner HITACHI HIGH-TECH CORP