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Method for manufacturing TOPCon solar cell and amorphous silicon crystallization method and equipment for TOPCon solar cell

A technology of solar cells and amorphous silicon, applied in the direction of final product manufacturing, sustainable manufacturing/processing, circuits, etc., can solve problems such as large temperature difference, thermal stress bursting film, large film thickness, etc., to eliminate dangling bonds and improve bluntness effect, improvement of density and defects and its electrical properties

Active Publication Date: 2020-02-07
IDEAL ENERGY (SHANGHAI) SUNFLOWER THIN FILM EQUIPMENT LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The thickness of the film is relatively large, and the temperature difference from high temperature annealing to room temperature is too large, resulting in excessive thermal stress and the formation of a burst film

Method used

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  • Method for manufacturing TOPCon solar cell and amorphous silicon crystallization method and equipment for TOPCon solar cell
  • Method for manufacturing TOPCon solar cell and amorphous silicon crystallization method and equipment for TOPCon solar cell
  • Method for manufacturing TOPCon solar cell and amorphous silicon crystallization method and equipment for TOPCon solar cell

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Embodiment Construction

[0025] specific implementation plan

[0026] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments, so as to better understand the purpose, features and advantages of the present invention. It should be understood that the aspects described below in conjunction with the drawings and specific embodiments are only exemplary, and should not be construed as limiting the protection scope of the present invention. The singular forms "a", "an" and "the" include plural referents unless the context clearly dictates otherwise.

[0027] see figure 1, which shows a schematic diagram of the composition and structure of an embodiment of a TOPCon solar cell applied to the method and equipment for crystallization of amorphous silicon according to the present invention. The TOPCon solar cell 1 includes an N-type silicon wafer 10, which is sequentially formed on the front side of the N-type silicon wafer 10 The P-type di...

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Abstract

The invention provides a method for manufacturing a TOPCon solar cell and an amorphous silicon crystallization method and equipment for the TOPCon solar cell. The crystallization method comprises thefollowing steps: (a) providing a silicon wafer for a TOPCon solar cell, wherein an oxide layer and an amorphous silicon layer are sequentially deposited on the back surface of the silicon wafer; (b) receiving the silicon wafer and performing heat treatment on the silicon wafer at a temperature of 800-950 DEG C for 20-40 minutes so as to crystallize the amorphous silicon layer into a polycrystalline silicon layer; and (c) receiving the silicon wafer and performing cooling heat treatment on the silicon wafer at a reduced temperature of 50-300 DEG C lower than the temperature in the step (c) for1-5 minutes, and performing heat treatment on the silicon wafer at a temperature of 800-1000 DEG C for 10 seconds to 5 minutes after each cooling heat treatment to release stress. According to the invention, amorphous silicon film explosion during crystallization can be avoided.

Description

technical field [0001] The invention relates to the field of solar cell manufacturing, in particular to a manufacturing method for TOPCon solar cells and a method and equipment for crystallizing amorphous silicon. Background technique [0002] The concept of TOPCon solar cells was first proposed by Fraunhofer ISE at the 28th EU PVSEC in 2013, which uses an ultra-thin oxide layer and doped thin-film silicon or amorphous silicon to passivate the back of the cell. This structure provides good surface passivation for the back of the silicon wafer. The ultra-thin oxide layer can allow many electrons to tunnel into the polysilicon layer while blocking the recombination of minority electrons and holes, and then the electrons are transported laterally in the polysilicon layer and collected by the metal, thus greatly The metal contact recombination current is reduced, and the open circuit voltage and short circuit current of the battery are increased. [0003] The use of plasma chem...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCH01L31/186H01L31/1864H01L31/1876Y02E10/50Y02P70/50
Inventor 马哲国
Owner IDEAL ENERGY (SHANGHAI) SUNFLOWER THIN FILM EQUIPMENT LTD