Vapor chamber semi-shearing forming method
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- DONGGUAN LINGJIE PRECISION MACHINING TECH CO LTD
- Publication Date
- 2020-02-11
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Abstract
Description
technical field
[0001] The invention relates to the technical field of vapor chamber manufacturing, in particular to a method for forming a vapor chamber by half-shearing. Background technique
[0002] With the rapid development of 5G wireless communications, radar, drones, satellites and other fields, the application prospects of high-power radio frequency chips are becoming more and more broad. The operating speed of the chip will be greatly improved, and the heat generated by it will also increase accordingly. Ensuring its stable operation has become the top priority. Therefore, the demand and challenges for the vapor chamber will also follow, and its industrial layout will be accelerated. There is no delay.
[0003] The upper and lower covers of the traditional vapor chamber are manufactured by wet etching. This method uses a large amount of oxidants and strong acids, and the waste water generated causes great pollution to the environment. At the same time, this process...