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Leadframe substrate having modulator and crack inhibiting structure and flip chip assembly using the same

A technology of adjusting parts and lead frames, which is applied in the direction of electrical components, electric solid devices, semiconductor devices, etc., and can solve problems such as easy cracking and mismatching thermal expansion coefficients

Active Publication Date: 2020-02-11
BRIDGE SEMICON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the large coefficient of thermal expansion (CTE) mismatch between the heat dissipation element 12 and the resin laminate 14, the contact area between the heat dissipation element 12 and the resin laminate 14 is prone to cracks

Method used

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  • Leadframe substrate having modulator and crack inhibiting structure and flip chip assembly using the same
  • Leadframe substrate having modulator and crack inhibiting structure and flip chip assembly using the same
  • Leadframe substrate having modulator and crack inhibiting structure and flip chip assembly using the same

Examples

Experimental program
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Embodiment 1

[0091] Figure 2-11 It is a diagram of a manufacturing method of an uncut lead frame substrate in the first embodiment of the present invention. The lead frame substrate includes a metal frame, a plurality of metal leads, an adjustment member, a resin layer, and a first anti-corrosion layer. split structure and a first routing line.

[0092] figure 2 and 3 They are respectively a cross-sectional view and a top perspective view of the lead frame 10 . The leadframe 10 is typically made of copper alloy, steel or alloy42, which can be formed by wet etching or stamping / punching processes on rolled metal strip. Here, the etching process can be performed from one side or both sides to etch through the metal strips to make the metal strips into the lead frame 10 with a predetermined overall pattern. In this embodiment, the lead frame 10 has a uniform thickness ranging from about 0.15 mm to about 1.0 mm, and includes a metal frame 11 and a plurality of metal leads 13 . The metal ...

Embodiment 2

[0105] Figure 17 It is a sectional view of the lead frame substrate according to the second embodiment of the present invention.

[0106] For the purpose of brief description, any descriptions in the above-mentioned embodiment 1 that can be used for the same application are incorporated here, and it is not necessary to repeat the same descriptions.

[0107] The lead frame substrate 200 with Figure 10 It is substantially the same as shown, the difference is that it further includes a second anti-crack structure 55 and a second routing line 56 alternately formed from below. The second anti-crack structure 55 covers the bottom of the metal frame 11 , the bottom of the metal lead 13 , the bottom of the regulating member 20 and the bottom of the resin layer 30 to provide protection from below. The second routing line 56 extends laterally on the second anti-crack structure 55, and passes through the bottom metal blind hole 564, thermally conducts to the bottom contact pad 25 of ...

Embodiment 3

[0113] Figure 21 It is a sectional view of the lead frame substrate according to the third embodiment of the present invention.

[0114] For the purpose of brief description, any descriptions in the above embodiments that can be used for the same application are incorporated here, and the same descriptions do not need to be repeated.

[0115] The lead frame substrate 300 with Figure 10 It is substantially the same as shown, the difference is that the adjustment member 20 further has a metal through hole 27 contacting the top contact pad 23 and the bottom contact pad 25 . The metal vias 27 extend through the thermally conductive and electrically insulating block 21 to provide an electrical connection between the top contact pad 23 and the bottom contact pad 25 for ground / power connection.

[0116] Figure 22 is a cross-sectional view of the semiconductor assembly 310, which electrically connects the semiconductor chip 61 to Figure 21 A leadframe substrate 300 is shown. ...

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Abstract

The invention discloses a leadframe substrate having a modulator and a crack inhibiting structure and a flip chip assembly using the same. The leadframe substrate usually has a modulator, multiple metal leads, a resin layer, and a crack inhibiting structure. The resin layer provides a mechanical bond between the modulator and the metal leads disposed around the peripheral side walls of the modulator. Since the crack inhibiting structure includes a continuous interlocking fiber sheet covering the modulator / resin interfaces, the separation induced along the modulator / resin interfaces or cracks formed inside the resin layer are prevented or prevented from extending to the top surfaces. Thus, the signal integrity of the flip chip assembly is guaranteed.

Description

technical field [0001] The invention relates to a lead frame substrate and its flip-chip assembly, in particular to a lead frame substrate and a flip-chip assembly with an adjusting part and a crack-proof structure on the adjusting part / resin interface. Background technique [0002] High-performance microprocessors and ASICs require high-performance circuit boards to interconnect signals. However, as the power increases, the large amount of heat generated by the semiconductor chip will degrade the performance of the device and cause thermal stress to the chip. U.S. Patent No. 8,859,908 to Wang et al., U.S. Patent No. 8,415,780 to Sun, U.S. Patent No. 9,185,791 to Wang et al., and U.S. Patent No. 9,706,639 to Lee disclose various package substrates that place heat dissipation elements on resin layers The through opening of the pressure plate allows the heat generated by the semiconductor chip to be dissipated directly through the heat dissipation element below. Such as fig...

Claims

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Application Information

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IPC IPC(8): H01L23/495
CPCH01L23/49544H01L23/49568H01L2224/18H01L2224/16225H01L2224/48091H01L2224/73204H01L2224/32225H01L2924/3511H01L2924/00014H01L2924/00H01L23/14H01L23/495H01L23/31H01L24/06H01L23/373H01L24/17
Inventor 林文强王家忠
Owner BRIDGE SEMICON