Vertical structure LED integrated with DBR and forming method thereof

A vertical structure, conductive substrate technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of low photoelectric conversion efficiency, slow LED response speed, etc., to improve electro-optical conversion efficiency, waveguide mode suppression, and improve light extraction efficiency. Effect

Inactive Publication Date: 2020-02-11
NANJING LIANGXIN INFORMATION TECH CO LTD
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  • Abstract
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Problems solved by technology

[0005] The invention provides a vertical structure LED integrated with DBR and its forming method, which is used to solve the problems of slow response spee

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  • Vertical structure LED integrated with DBR and forming method thereof
  • Vertical structure LED integrated with DBR and forming method thereof
  • Vertical structure LED integrated with DBR and forming method thereof

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Example Embodiment

[0047] The specific implementation of the vertical structure LED with integrated DBR provided by the present invention and its forming method will be described in detail below with reference to the accompanying drawings.

[0048] This embodiment provides a vertical structure LED integrated with DBR (Distributed Bragg Reflector, distributed Bragg reflector). figure 1 It is a schematic diagram of a vertical structure LED with integrated DBR in a specific embodiment of the present invention. Such as figure 1 As shown, the vertical structure LED with integrated DBR provided in this embodiment includes:

[0049] A conductive substrate 10 having a first surface and a second surface opposite to the first surface;

[0050] The first DBR layer 12 is located on the first surface of the conductive substrate 10;

[0051] The epitaxial layer 11, located on the first DBR layer 12, includes a first contact layer 115, a quantum well layer 112, and a second contact layer 114 that are sequentially stac...

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Abstract

The invention relates to the technical fields of lighting, display and optical communication, in particular to a vertical structure LED integrated with DBR and a forming method thereof. The vertical structure LED integrated with the DBR comprises a conductive substrate which is provided with a first surface and a second surface opposite the first surface; a first DBR layer which is arranged on thefirst surface of the conductive substrate; an epitaxial layer which is located on the first DBR layer and comprises a first contact layer, a quantum well layer and a second contact layer which are sequentially stacked along a direction perpendicular to the conductive substrate, wherein the epitaxial layer has thickness less than the wavelength of the light emitted by the vertical structure LED integrated with the DBR layer; and a second DBR layer which is located on the surface of the epitaxial layer opposite the first DBR layer. A resonant cavity is formed inside the LED device so that the electro-optic conversion efficiency is significantly improved and the luminous quality of the LED device is improved.

Description

technical field [0001] The invention relates to the technical fields of illumination, display and optical communication, in particular to a DBR-integrated vertical structure LED and a forming method thereof. Background technique [0002] Light emitting diodes (Light Emitting Diode, LED) have the advantages of small size, high efficiency, long life, etc., and have broad application prospects in the fields of illumination, display and optical communication. Traditional light-emitting diodes use sapphire as a growth substrate. However, since the sapphire substrate is non-conductive, conventional light-emitting diodes usually adopt a lateral structure with electrodes on the same side. This lateral structure has at least the following two disadvantages: on the one hand, the current flows in the N-type layer laterally at unequal distances, and there is a current congestion phenomenon, which leads to high local heat generation of the light-emitting diode device and affects device ...

Claims

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Application Information

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IPC IPC(8): H01L33/46H01L33/00
CPCH01L33/005H01L33/46H01L33/465
Inventor 王永进
Owner NANJING LIANGXIN INFORMATION TECH CO LTD
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