Check patentability & draft patents in minutes with Patsnap Eureka AI!

Vertical structure LED integrated with DBR and forming method thereof

A vertical structure, conductive substrate technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of low photoelectric conversion efficiency, slow LED response speed, etc., to improve electro-optical conversion efficiency, waveguide mode suppression, and improve light extraction efficiency. Effect

Inactive Publication Date: 2020-02-11
NANJING LIANGXIN INFORMATION TECH CO LTD
View PDF8 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The invention provides a vertical structure LED integrated with DBR and its forming method, which is used to solve the problems of slow response speed and low photoelectric conversion efficiency of the existing LED, so as to meet the needs of different applications and expand the application field of LED

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Vertical structure LED integrated with DBR and forming method thereof
  • Vertical structure LED integrated with DBR and forming method thereof
  • Vertical structure LED integrated with DBR and forming method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0047] The specific implementation of the DBR-integrated vertical structure LED provided by the present invention and its forming method will be described in detail below with reference to the accompanying drawings.

[0048] This specific embodiment provides a vertical structure LED integrating DBR (Distributed Bragg Reflector, distributed Bragg reflector), with figure 1 It is a structural schematic diagram of a vertical structure LED integrated with a DBR in a specific embodiment of the present invention. Such as figure 1 As shown, the vertical structure LED integrated DBR provided in this specific embodiment includes:

[0049] a conductive substrate 10 having a first surface and a second surface opposite to the first surface;

[0050] A first DBR layer 12 located on the first surface of the conductive substrate 10;

[0051] The epitaxial layer 11, located on the first DBR layer 12, includes a first contact layer 115, a quantum well layer 112 and a second contact layer 114...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the technical fields of lighting, display and optical communication, in particular to a vertical structure LED integrated with DBR and a forming method thereof. The vertical structure LED integrated with the DBR comprises a conductive substrate which is provided with a first surface and a second surface opposite the first surface; a first DBR layer which is arranged on thefirst surface of the conductive substrate; an epitaxial layer which is located on the first DBR layer and comprises a first contact layer, a quantum well layer and a second contact layer which are sequentially stacked along a direction perpendicular to the conductive substrate, wherein the epitaxial layer has thickness less than the wavelength of the light emitted by the vertical structure LED integrated with the DBR layer; and a second DBR layer which is located on the surface of the epitaxial layer opposite the first DBR layer. A resonant cavity is formed inside the LED device so that the electro-optic conversion efficiency is significantly improved and the luminous quality of the LED device is improved.

Description

technical field [0001] The invention relates to the technical fields of illumination, display and optical communication, in particular to a DBR-integrated vertical structure LED and a forming method thereof. Background technique [0002] Light emitting diodes (Light Emitting Diode, LED) have the advantages of small size, high efficiency, long life, etc., and have broad application prospects in the fields of illumination, display and optical communication. Traditional light-emitting diodes use sapphire as a growth substrate. However, since the sapphire substrate is non-conductive, conventional light-emitting diodes usually adopt a lateral structure with electrodes on the same side. This lateral structure has at least the following two disadvantages: on the one hand, the current flows in the N-type layer laterally at unequal distances, and there is a current congestion phenomenon, which leads to high local heat generation of the light-emitting diode device and affects device ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L33/46H01L33/00
CPCH01L33/005H01L33/46H01L33/465
Inventor 王永进
Owner NANJING LIANGXIN INFORMATION TECH CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com