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Novel groove chain type combined black silicon suede manufacturing method

A combined and chained technology, applied in the field of high-efficiency solar polycrystalline cell manufacturing, can solve the problems of long process flow, large number of tanks, and high equipment costs, and achieve the effects of improving uniformity, reducing investment costs, and improving conversion efficiency

Inactive Publication Date: 2020-02-21
NANJING NAXIN NEW MATERIAL
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Problems solved by technology

[0004] Aiming at the deficiencies of the prior art, the present invention provides a new type of method for the preparation of black silicon suede with a combination of groove and chain type, which has the ability to prepare micro-nano micro-textured suede structures with uniform suede size and adjustable size and depth. Advantages, it solves the problems that black silicon texturing requires a large number of tanks, long process flow, large equipment volume and high equipment cost.

Method used

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  • Novel groove chain type combined black silicon suede manufacturing method
  • Novel groove chain type combined black silicon suede manufacturing method
  • Novel groove chain type combined black silicon suede manufacturing method

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Embodiment Construction

[0033] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0034] see Figure 1-5 , a novel method for preparing black silicon suede with a combination of groove and chain type, comprising the following steps:

[0035] S1: Initial polishing, silver plating and digging of polysilicon wafers: place the diamond wire polysilicon wafers in a functional tank integrated with polishing, plating and digging. There is an etching solution to promote the reaction of silicon wafers in the functional tank, and wait for the silicon ...

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Abstract

The invention relates to the high-efficiency solar polycrystalline cell manufacturing technology field, and discloses a novel groove chain type combined black silicon suede manufacturing method. The method comprises the following steps of S1, carrying out primary polishing, silver plating and hole digging on a polycrystalline silicon wafer; S2, rinsing; S3, desilverizing; S4, carrying out rinsingagain; S5, drying; S6, carrying out chambering; S7, washing with water; S8, carrying out alkali washing; S9, washing with water again; S10, carrying out acid pickling; and S11, drying again. The stepsof S1, S2, S3, S4 and S5 are completed in a groove type machine, and the steps of S6, S7, S8, S9, S10 and S11 are completed in a chain-type machine. By using the novel groove chain type combined black silicon suede manufacturing method, uniformity of a silicon wafer surface suede structure can be improved, existing chain texturing equipment can be fully used, and a length of the equipment is greatly shortened.

Description

technical field [0001] The invention relates to the technical field of manufacturing high-efficiency solar polycrystalline cells, in particular to a novel method for preparing a black silicon suede surface combined with grooves and chains. Background technique [0002] As we all know, before the popularization of diamond wire, conventional mortar sheet texturing is usually done on chain machines, so chain texturing equipment is very common in battery manufacturers. With the promotion of diamond wire silicon wafers, black silicon texturing technology has gradually become the mainstream of diamond wire polysilicon texturing technology due to its obvious advantages in efficiency and appearance. The large number of bodies, long process flow, large equipment volume, high equipment cost and other characteristics restrict the continuous promotion of black silicon technology. Contents of the invention [0003] (1) Solved technical problems [0004] Aiming at the deficiencies of ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0236
CPCH01L31/02363H01L31/1804Y02E10/547Y02P70/50
Inventor 候成成彭晓晨印越管自生
Owner NANJING NAXIN NEW MATERIAL