Method for forming single diffusion break

Abstract

The present application discloses a method for forming a single diffusion break (SDB) and relates to the field of semiconductor manufacturing. The method includes: forming a plurality of strip-shapedfins and a virtual gate on a silicon substrate, and forming spacers on both sides of the virtual gate; forming a source and a drain on the strip-shaped fins; depositing an interlayer dielectric layer,and performing CMP on the interlayer dielectric layer to expose the top of the virtual gate; replacing the virtual gate with a metal gate; etching the top of the metal gate to form a contact window;performing a photolithography process to expose part of the metal gate, wherein the exposed metal gate is configured to make the SDB; etching the exposed metal gate and the silicon under the exposed metal gate to form a single diffusion trench; depositing a filling material and performing CMP to form the SDB, wherein the filling material is configured to fill the contact window and the single diffusion trench. The method solves the problem that a conventional SDB method is likely to cause the device performance to deteriorate, and achieves an effect of improving the device performance and theyield.

Description

technical field [0001] The present application relates to the field of semiconductor manufacturing, in particular to a method for forming a cut-off of a single diffusion region. Background technique [0002] With the continuous development of semiconductor technology, the size of CMOS devices is also continuously reduced. Since the line width of the gate is also reduced when the CMOS device is scaled down, the source and drain are easy to leak, and the saturation current of the CMOS device is difficult to increase. Therefore, the CMOS device develops from a two-dimensional planar type to a three-dimensional type. Field Effect Transistor (FinFET) came into being. FinFET technology can be used for 22nm and below technology nodes. In order to increase the density of devices in the FinFET process, multiple single diffusion breaks (SDB) are used to form more and narrower shallow trench isolation to save gate The area of ​​the array. [0003] In general, the single diffusion re...

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Problems solved by technology

[0004] The present application provides a method for forming a cut-off of a single diffusion region, which can solve the problem of poor performance of devices formed with a cut-off of a single diffusion region in the related art

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