Si/MoS2 electrode material preparation method

A technology of electrode materials and quantum dots, applied in the manufacture of hybrid/electric double layer capacitors, hybrid capacitor electrodes, etc., can solve problems such as poor conductivity and limited development, and achieve improved electrode material performance, close relative positions, and close contact Effect

Inactive Publication Date: 2020-03-10
CHANGAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, the lamellar structure makes MoS 2 It has a better contact with the electrolyte solution, thus realizing the rapid transport of ions, but MoS 2 As a pseudocapacitive material, there is a problem of poor conductivity, which limits its development in capacitor energy storage to a large extent from the perspective of energy transmission.

Method used

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  • Si/MoS2 electrode material preparation method
  • Si/MoS2 electrode material preparation method
  • Si/MoS2 electrode material preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] Step 1, 0.1 g of sodium ascorbate was dissolved in 10 mL of deionized water to prepare a solution, and then 3.75 mL of sodium ascorbate solution and 1 mL of N-aminoethyl-γ-aminopropyltrimethoxysilane were added to 12 mL of deionized water, Stirring at room temperature for 20 minutes to obtain Si quantum dots;

[0022] Step 2, measure 20mL of deionized water in a beaker, mix 0.7062g (NH 4 ) 6 Mo 7 o 24 ·6H 2 O and 1.3049gH 2 NCSNH 2 Weigh it well and pour it into a beaker, continue the homogenization treatment for 30 minutes, then take 1mL Si and add it to the solution for homogenization treatment again;

[0023] Step 3: The above solution was hydrothermally reacted at 180° C. for 18 hours, and when it was cooled to room temperature, the solution was centrifugally cleaned, and the lower precipitate was left for vacuum drying.

Embodiment 2

[0025] Step 1, 0.1 g of sodium ascorbate was dissolved in 10 mL of deionized water to prepare a solution, and then 3.75 mL of sodium ascorbate solution and 1 mL of N-aminoethyl-γ-aminopropyltrimethoxysilane were added to 12 mL of deionized water, Stirring at room temperature for 20 minutes to obtain Si quantum dots;

[0026] Step 2, measure 20mL of deionized water in a beaker, mix 0.7062g (NH 4 ) 6 Mo 7 o 24 ·6H 2 O and 1.3049gH 2 NCSNH 2 Weigh it well and pour it into a beaker, continue the homogenization treatment for 30 minutes, then take 3mL Si and add it to the solution for homogenization treatment again;

[0027] Step 3: The above solution was hydrothermally reacted at 180° C. for 18 hours, and when it was cooled to room temperature, the solution was centrifugally cleaned, and the lower precipitate was left for vacuum drying.

Embodiment 3

[0029] Step 1, 0.1 g of sodium ascorbate was dissolved in 10 mL of deionized water to prepare a solution, and then 3.75 mL of sodium ascorbate solution and 1 mL of N-aminoethyl-γ-aminopropyltrimethoxysilane were added to 12 mL of deionized water, Stirring at room temperature for 20 minutes to obtain Si quantum dots;

[0030] Step 2, measure 20mL of deionized water in a beaker, mix 0.7062g (NH 4 ) 6 Mo 7 o 24 ·6H 2 O and 1.3049gH 2 NCSNH 2 Weigh it well and pour it into a beaker, continue the homogenization treatment for 30 minutes, then take 5mL Si and add it to the solution for homogenization treatment again;

[0031] Step 3: The above solution was hydrothermally reacted at 180° C. for 18 hours, and when it was cooled to room temperature, the solution was centrifugally cleaned, and the lower precipitate was left for vacuum drying.

[0032] see figure 1 , figure 2 and image 3 , the present invention and the comparative material MoS without adding Si quantum dots 2...

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Abstract

The invention discloses a Si / MoS2 electrode material preparation method. The preparation method comprises the following steps of preparing Si quantum dots; mixing the Si quantum dots with ammonium molybdate and urea; and finally, acquiring a Si / MoS2 electrode material. Electrochemical performance of the Si / MoS2 electrode material is superior to that of single MoS2, and when current density is 5A g<-1>, a specific capacitance of Si / MoS2 is 574.4 F g<-1> and is much higher than a specific capacitance 82.2 F g<-1> of MoS2. Compared with the MoS2, by using the material prepared in the invention, apore between Si / MoS2 nanosheets becomes large, a relative position between the nanosheets becomes tighter, and the nanosheets are distributed in a mutually staggered and mutually attached relationship so that electrolyte ions are in tighter contact with an active substance, and a Faraday reaction on a surface of an electrode is promoted.

Description

technical field [0001] The invention belongs to the field of electrode material preparation, in particular to a Si / MoS 2 Electrode material preparation method. Background technique [0002] Si quantum dots are a material with many advantages that have been developed in recent years. The lower preparation cost lays the foundation for the rapid application of Si quantum dots in actual production, and the lower toxicity provides security for Si quantum dots in experimental research. The chemical properties provide support for its research on electrical properties. [0003] Transition metal molybdenum disulfide (MoS) 2 ) is a glossy black powder, there are covalent bonds and van der Waals forces between layers and layers respectively, and it is a material of great research value. Due to the existence of weak van der Waals forces, electrolyte ions are easy to enter MoS 2 middle. In addition, there are many valence states of Mo ions, which promote the occurrence of Faradaic re...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G11/24H01G11/30H01G11/86
CPCH01G11/24H01G11/30H01G11/86Y02E60/13
Inventor 郑佳红牛世峰张润梅
Owner CHANGAN UNIV
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