Si/MoS2 electrode material preparation method
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- CHANGAN UNIV
- Publication Date
- 2020-03-10
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
technical field
[0001] The invention belongs to the field of electrode material preparation, in particular to a Si / MoS 2 Electrode material preparation method. Background technique
[0002] Si quantum dots are a material with many advantages that have been developed in recent years. The lower preparation cost lays the foundation for the rapid application of Si quantum dots in actual production, and the lower toxicity provides security for Si quantum dots in experimental research. The chemical properties provide support for its research on electrical properties.
[0003] Transition metal molybdenum disulfide (MoS) 2 ) is a glossy black powder, there are covalent bonds and van der Waals forces between layers and layers respectively, and it is a material of great research value. Due to the existence of weak van der Waals forces, electrolyte ions are easy to enter MoS 2 middle. In addition, there are many valence states of Mo ions, which promote the occurrence of Faradaic re...