Preparation method for polycrystalline silicon function layer

A polysilicon layer and functional layer technology, which is applied in the manufacture of semiconductor/solid-state devices, electrical components, circuits, etc., can solve the problems of a large number of charges, the device is prone to leakage, and the thickness uniformity is not easy to control, etc., to improve high-frequency performance. , the effect of reducing the number of internal charges, excellent deposition uniformity
CN110875171AInactive Publication Date: 2020-03-10BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
Publication Date
2020-03-10
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention provides a preparation method for a polycrystalline silicon function layer. The preparation method comprises the following steps of: forming an isolation layer on a substrate, forming apolycrystalline seed crystal layer on the isolation layer, and forming a polycrystalline silicon layer on the polycrystalline seed crystal layer. According to the preparation method for the polycrystalline silicon function layer provided by the invention, the formation of a low-resistance region can be avoided, the quantity of charges inside the polycrystalline silicon function layer is reduced, and the controllability of the thickness uniformity of the polycrystalline silicon function layer is improved.
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Description

technical field

[0001] The invention relates to the field of polysilicon functional layer manufacturing, in particular to a method for preparing a polysilicon functional layer. Background technique

[0002] The polysilicon functional layer can be applied to gates of metal oxide semiconductor field effect transistors, polysilicon isolation layers, and polysilicon sacrificial layers in the MEMS field, etc.

[0003] For single-sided polysilicon functional layers, SiCl is generally used 4 、SiH 4 、SiF 4 etc. as raw materials, prepared by PECVD (Plasma Enhanced Chemical Vapor Deposition, plasma enhanced chemical vapor deposition). In this way, the reaction temperature (generally not higher than 450°C) is lower, and the growth rate is faster, and by controlling the content of doping elements in the reaction process, a polysilicon functional layer with required resistivity can be obtained. figure 1 It is a structural diagram of an existing polysilicon functional layer. Such as ...

Claims

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