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Semiconductor Device

A semiconductor, conductive type technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., to increase the effective area and effective capacitance value, and improve the effect of poor stability

Active Publication Date: 2020-03-24
RAYDIUM SEMICON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Therefore, the present invention proposes a semiconductor device capable of increasing the effective area and effective capacitance value of the capacitor with the same overall area, so as to solve the problems encountered in the prior art

Method used

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  • Semiconductor Device
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Examples

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Embodiment Construction

[0079] A preferred embodiment according to the present invention is a semiconductor device.

[0080] In this embodiment, the semiconductor device may be a metal-oxide-semiconductor capacitor applied in an operational amplifier. Its main function is to provide a higher compensation capacitor value to improve the stability of the system, thereby effectively improving the disadvantages of poor system stability caused by the low actual compensation capacitor value in the prior art.

[0081] First, please refer to Figure 4A and Figure 4B , Figure 4A and Figure 4B are schematic diagrams of each internal distributed capacitance in a general metal oxide half capacitor.

[0082] Such as Figure 4A and Figure 4B As shown, the MOS capacitor formed on the substrate B includes a gate G, a source S and a drain D. As shown in FIG. The internal distributed capacitance in the metal oxide semicapacitor MOS may include the first capacitance C1 between the gate G and the source S, the s...

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PUM

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Abstract

A semiconductor device is disclosed. The semiconductor device includes a substrate, a well, an oxidation layer, a gate electrode and a shared source / drain electrode. The substrate has a first surfaceand a second surface opposite to each other. The well is formed in the substrate. The substrate and the well have a first conductivity type and a second conductivity type respectively. The oxidation layer is formed in the well. The gate electrode is formed above the first surface and has a first opening. The shared source / drain electrode is formed near the first surface in the oxidation layer andexposed from the first opening. The shared source / drain electrode has the first conductivity type.

Description

technical field [0001] The present invention relates to a semiconductor device, in particular to a semiconductor device capable of increasing the effective area and effective capacitance of a capacitor with the same overall area. Background technique [0002] Generally speaking, the source driver in the display device usually adopts such as figure 1 The shown operational amplifier (Operational amplifier) ​​OP is used to drive the resistance-capacitance load (RC loading) of the liquid crystal display panel. [0003] The operational amplifier OP may include an input stage (Input stage) IS and an output stage (Output stage) OS connected in series. In order to maintain the stability of the system, the output stage OS of the operational amplifier OP usually needs to be provided with a compensation capacitor, for example figure 2 In the output stage OS, a metal-oxide-semiconductor capacitor (Metal-Oxide-Semiconductor capacitor) MOS is used as a compensation capacitor. [0004]...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/64H01L29/06
CPCH01L28/40H01L29/0684H01L29/94H01L27/0928H01L21/0223H01L23/53271
Inventor 周冠宏任柏璋蔡明衡
Owner RAYDIUM SEMICON
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